Micron Technology, Inc. Memory MT29F1G16ABBEAHC-IT:E TR

Description
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)
Description
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F1G16ABBEAHC-IT:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G16ABBEAHC-IT:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F1G16ABBEAHC-IT:E TR
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1G16ABBEAHC-IT:E TR MT29F1G16ABBEAHC-IT:E TR MT29F1G16ABBEAHC-IT:E TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

IC SRAM NONVOLATILE CNTRLR 8SOIC - 815-BQ2201SNG4 - Utmel Electronic Limited
Specs
Memory Category SRAM; SRAM Chip
Logic Family CMOS
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
3 suppliers
Memory - AS58C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882565 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details