Micron Technology, Inc. Memory MT29F1G16ABBEAH4:E

Description
IC FLASH 1GBIT PARALLEL 63VFBGA
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Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
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IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
Memory - Flash - MT29F1G16ABBEAH4:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F1G16ABBEAH4:E
Memory - Flash - MT29F1G16ABBEAH4:E
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting Style: SMD Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 1Gb (64M x 16) Categories: Integrated Circuits Supplier Device Package: 63-VFBGA (9x11) Status: Obsolete Temperature Range - Operating: 0°C ~ 70°C Memory Format: FLASH Memory Interface: Parallel Manufacturer Package: 63-VFBGA Popularity: Low Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Family Part Number: MT29F1G16 Manufacturer Pack Quantity: 1,260 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting Style: SMD
Technology: FLASH - NAND
Memory Type: Non-Volatile
Memory Size: 1Gb (64M x 16)
Categories: Integrated Circuits
Supplier Device Package: 63-VFBGA (9x11)
Status: Obsolete
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: FLASH
Memory Interface: Parallel
Manufacturer Package: 63-VFBGA
Popularity: Low
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Family Part Number: MT29F1G16
Manufacturer Pack Quantity: 1,260
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V

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Integrated Circuits (ICs) - Memory - Memory - MT29F1G16ABBEAH4:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G16ABBEAH4:E
Integrated Circuits (ICs) - Memory - Memory MT29F1G16ABBEAH4:E
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Memory - MT29F1G16ABBEAH4:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

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Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F1G16ABBEAH4:E MT29F1G16ABBEAH4:E MT29F1G16ABBEAH4:E MT29F1G16ABBEAH4:E
Product Name Memory Memory - Flash - MT29F1G16ABBEAH4:E Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; FLASH - NAND Flash; Non-Volatile Flash; Non-Volatile Flash; Flash Flash; FLASH
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