Micron Technology, Inc. Memory - Flash - MT29F1G16ABBEAH4:E TR MT29F1G16ABBEAH4:E TR

Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (64M x 16) Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 63-VFBGA (9x11) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
Request a Quote
Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (64M x 16) Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 63-VFBGA (9x11) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F1G16ABBEAH4:E TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F1G16ABBEAH4:E TR
Memory - Flash - MT29F1G16ABBEAH4:E TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (64M x 16) Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 63-VFBGA (9x11) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 63-VFBGA (9x11)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

Buy Now
Memory IC and Storage Component - 774-MT29F1G16ABBEAH4:E TR - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT29F1G16ABBEAH4:E TR
Memory IC and Storage Component 774-MT29F1G16ABBEAH4:E TR
IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: MT29F1G16ABBEAH4:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G16ABBEAH4 :E TR can be used for catalog matching and distributor lookup.

IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: MT29F1G16ABBEAH4:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G16ABBEAH4:E TR can be used for catalog matching and distributor lookup.

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F1G16ABBEAH4:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G16ABBEAH4:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F1G16ABBEAH4:E TR
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

Buy Now

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT29F1G16ABBEAH4:E TR MT29F1G16ABBEAH4:E TR MT29F1G16ABBEAH4:E TR MT29F1G16ABBEAH4:E TR
Product Name Memory - Flash - MT29F1G16ABBEAH4:E TR Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Non-Volatile Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4SD16M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 128000 kbits
View Details
Memory - 5962-8769002SA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 40 ns
Density 4 kbits
View Details
IT infrastructure Memory - 1454494-AM29F032B-75SF - Win Source Electronics
Specs
Memory Category Flash
View Details
2 suppliers