Micron Technology, Inc. Memory MT29F1G16ABBDAH4:D

Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Request a Quote Datasheet
Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
Memory IC and Storage Component - 774-MT29F1G16ABBDAH4:D - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT29F1G16ABBDAH4:D
Memory IC and Storage Component 774-MT29F1G16ABBDAH4:D
IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: MT29F1G16ABBDAH4:D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G16ABBDAH4 :D can be used for catalog matching and distributor lookup.

IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: MT29F1G16ABBDAH4:D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G16ABBDAH4:D can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - Flash - MT29F1G16ABBDAH4:D -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F1G16ABBDAH4:D
Memory - Flash - MT29F1G16ABBDAH4:D
Manufacturer: Micron Technology Inc. Packaging: Bulk Operating Temperature Range: 0°C ~ 70°C (TA) Package: 63-VFBGA Mounting: SMD Technology: FLASH - NAND Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Non-Volatile Memory Size: 1Gb (64M x 16) Family Name: MT29F1G16ABBDAH4 Categories: Integrated Circuits (ICs) Memory Format: FLASH Memory Interface: Parallel Manufacturer Package: 63-VFBGA (9x11) Alternative Parts (Cross-Reference): HY27SA081G1M-FPIB; HY27SA081G1M-FIP; HY27SA081G1M-FIB; HY27SA081G1M-FPIP; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Singapore Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 63-VFBGA
Mounting: SMD
Technology: FLASH - NAND
Operating Supply Voltage: 1.7 V ~ 1.95 V
Memory Type: Non-Volatile
Memory Size: 1Gb (64M x 16)
Family Name: MT29F1G16ABBDAH4
Categories: Integrated Circuits (ICs)
Memory Format: FLASH
Memory Interface: Parallel
Manufacturer Package: 63-VFBGA (9x11)
Alternative Parts (Cross-Reference): HY27SA081G1M-FPIB; HY27SA081G1M-FIP; HY27SA081G1M-FIB; HY27SA081G1M-FPIP;
Introduction Date: January 01, 2000
ECCN: 3A991.b.1.a
Country of Origin: Singapore
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F1G16ABBDAH4:D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G16ABBDAH4:D
Integrated Circuits (ICs) - Memory - Memory MT29F1G16ABBDAH4:D
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Memory - MT29F1G16ABBDAH4:D - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

Buy Now

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F1G16ABBDAH4:D 774-MT29F1G16ABBDAH4:D MT29F1G16ABBDAH4:D MT29F1G16ABBDAH4:D MT29F1G16ABBDAH4:D
Product Name Memory Memory IC and Storage Component Memory - Flash - MT29F1G16ABBDAH4:D Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; FLASH - NAND Flash; Non-Volatile Flash; Non-Volatile Flash; Non-Volatile Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

CD40105B CMOS 4-Bit-by-16-Word FIFO Register - CD40105BE - Texas Instruments
Specs
Memory Category FIFO
Package Type PDIP,SO,TSSOP
View Details
5 suppliers
Memory - IS29GL512S-11DHB01-TR - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers
Memory - 6116LA25SOG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 16 kbits
View Details
Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details