Micron Technology, Inc. Memory MT29F1G08ABCHC:C TR

Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Description
IC FLASH 1GBIT PARALLEL 63VFBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABCHC:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABCHC:C TR
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABCHC:C TR
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
Memory - MT29F1G08ABCHC:C TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1G08ABCHC:C TR MT29F1G08ABCHC:C TR MT29F1G08ABCHC:C TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXxxSMS01GP32xxx-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - QMP29GL512P10TFIR20D - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512000 kbits
View Details
2 suppliers
Memory - 27S185DM/B - Quarktwin Technology Ltd.
Rochester Electronics
View Details
2 suppliers