Micron Technology, Inc. Memory MT29F1G08ABBFAH4-AATES:F

Description
FLASH - NAND (SLC) Memory IC 1Gbit Parallel 63-VFBGA (9x11)
Datasheet
Description
FLASH - NAND (SLC) Memory IC 1Gbit Parallel 63-VFBGA (9x11)
Datasheet

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FLASH - NAND (SLC) Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND (SLC) Memory IC 1Gbit Parallel 63-VFBGA (9x11)

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IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABBFAH4-AATES:F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABBFAH4-AATES:F
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABBFAH4-AATES:F
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1G08ABBFAH4-AATES:F MT29F1G08ABBFAH4-AATES:F MT29F1G08ABBFAH4-AATES:F
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
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