Micron Technology, Inc. Memory MT29F1G08ABBFAH4-AATES:F

Description
FLASH - NAND (SLC) Memory IC 1Gbit Parallel 63-VFBGA (9x11)
Datasheet
Description
FLASH - NAND (SLC) Memory IC 1Gbit Parallel 63-VFBGA (9x11)
Datasheet

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FLASH - NAND (SLC) Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND (SLC) Memory IC 1Gbit Parallel 63-VFBGA (9x11)

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Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABBFAH4-AATES:F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABBFAH4-AATES:F
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABBFAH4-AATES:F
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1G08ABBFAH4-AATES:F MT29F1G08ABBFAH4-AATES:F MT29F1G08ABBFAH4-AATES:F
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
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