Micron Technology, Inc. Memory - Flash - MT29F1G08ABBEAH4-ITX:E MT29F1G08ABBEAH4-ITX:E

Description
Manufacturer: Micron Technology Inc. Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 63-VFBGA Mounting: SMD Technology: FLASH - NAND Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Non-Volatile Memory Size: 1Gb (128M x 8) Family Name: MT29F1G08ABBEA Categories: Integrated Circuits (ICs) Memory Format: FLASH Manufacturer Homepage: www.micron.com Memory Interface: Parallel Manufacturer Package: 63-VFBGA (9x11) Alternative Parts (Cross-Reference): HY27SA081G1M-FPEP; HY27SA161G1M-FCS; HY27SA161G1M-FPES; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Singapore Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Micron Technology Inc. Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 63-VFBGA Mounting: SMD Technology: FLASH - NAND Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Non-Volatile Memory Size: 1Gb (128M x 8) Family Name: MT29F1G08ABBEA Categories: Integrated Circuits (ICs) Memory Format: FLASH Manufacturer Homepage: www.micron.com Memory Interface: Parallel Manufacturer Package: 63-VFBGA (9x11) Alternative Parts (Cross-Reference): HY27SA081G1M-FPEP; HY27SA161G1M-FCS; HY27SA161G1M-FPES; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Singapore Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F1G08ABBEAH4-ITX:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F1G08ABBEAH4-ITX:E
Memory - Flash - MT29F1G08ABBEAH4-ITX:E
Manufacturer: Micron Technology Inc. Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 63-VFBGA Mounting: SMD Technology: FLASH - NAND Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Non-Volatile Memory Size: 1Gb (128M x 8) Family Name: MT29F1G08ABBEA Categories: Integrated Circuits (ICs) Memory Format: FLASH Manufacturer Homepage: www.micron.com Memory Interface: Parallel Manufacturer Package: 63-VFBGA (9x11) Alternative Parts (Cross-Reference): HY27SA081G1M-FPEP; HY27SA161G1M-FCS; HY27SA161G1M-FPES; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Singapore Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Tray
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 63-VFBGA
Mounting: SMD
Technology: FLASH - NAND
Operating Supply Voltage: 1.7 V ~ 1.95 V
Memory Type: Non-Volatile
Memory Size: 1Gb (128M x 8)
Family Name: MT29F1G08ABBEA
Categories: Integrated Circuits (ICs)
Memory Format: FLASH
Manufacturer Homepage: www.micron.com
Memory Interface: Parallel
Manufacturer Package: 63-VFBGA (9x11)
Alternative Parts (Cross-Reference): HY27SA081G1M-FPEP; HY27SA161G1M-FCS; HY27SA161G1M-FPES;
Introduction Date: January 01, 2000
ECCN: 3A991.b.1.a
Country of Origin: Singapore
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now
Memory IC and Storage Component - 774-MT29F1G08ABBEAH4-ITX:E - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT29F1G08ABBEAH4-ITX:E
Memory IC and Storage Component 774-MT29F1G08ABBEAH4-ITX:E
IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: MT29F1G08ABBEAH4-ITX :E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G08ABBEAH4 -ITX:E can be used for catalog matching and distributor lookup.

IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: MT29F1G08ABBEAH4-ITX:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G08ABBEAH4-ITX:E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABBEAH4-ITX:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABBEAH4-ITX:E
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABBEAH4-ITX:E
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
Flash Memory, 1Gbit, -40 To 85Deg C; Flash Memory Type Micron - 80AH7668 - Newark, An Avnet Company
Chicago, IL, United States
Flash Memory, 1Gbit, -40 To 85Deg C; Flash Memory Type Micron
80AH7668
Flash Memory, 1Gbit, -40 To 85Deg C; Flash Memory Type Micron 80AH7668
FLASH MEMORY, 1GBIT, -40 TO 85DEG C; Flash Memory Type:SLC NAND; Memory Size:1Gbit; Flash Memory Configuration:128M x 8bit; IC Interface Type:Parallel; Memory Case Style:VFBGA; No. of Pins:63Pins; Clock Frequency:50MHz RoHS Compliant: Yes

FLASH MEMORY, 1GBIT, -40 TO 85DEG C; Flash Memory Type:SLC NAND; Memory Size:1Gbit; Flash Memory Configuration:128M x 8bit; IC Interface Type:Parallel; Memory Case Style:VFBGA; No. of Pins:63Pins; Clock Frequency:50MHz RoHS Compliant: Yes

Supplier's Site Datasheet
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

Buy Now
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Quarktwin Technology Ltd. Lingto Electronic Limited ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT29F1G08ABBEAH4-ITX:E MT29F1G08ABBEAH4-ITX:E 80AH7668 MT29F1G08ABBEAH4-ITX:E MT29F1G08ABBEAH4-ITX:E MT29F1G08ABBEAH4-ITX:E
Product Name Memory - Flash - MT29F1G08ABBEAH4-ITX:E Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Flash Memory, 1Gbit, -40 To 85Deg C; Flash Memory Type Micron Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Non-Volatile Flash; Non-Volatile Flash Flash; FLASH Flash; Flash Flash; FLASH - NAND
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Supply Voltage 1.7 V ~ 1.95 V 1.7V ~ 1.95V 63-VFBGA 1.7V ~ 1.95V 1.7V ~ 1.95V
Endurance 100000 Write/Erase Cycles
Density 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Controllers - DP8421ATVX-25 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
 - 4164-15FGS/BZA - Rochester Electronics
Specs
Memory Category DRAM Chip
Package Type CLCC18
View Details
4 suppliers
Memory - MYX4DD3K512M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details
Flash Memory, 16Mbit, 90Ns, 44-Soic; Flash Memory Type Cypress Infineon Technologies - 58K5502 - Newark, An Avnet Company
Specs
Memory Category Flash
Density 16000 kbits
Package Type SOIC
View Details