Micron Technology, Inc. Memory - Flash - MT29F1G08ABBEAH4-IT:E TR MT29F1G08ABBEAH4-IT:E TR

Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-VFBGA (10.5x13) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-VFBGA (10.5x13) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F1G08ABBEAH4-IT:E TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F1G08ABBEAH4-IT:E TR
Memory - Flash - MT29F1G08ABBEAH4-IT:E TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-VFBGA (10.5x13) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 63-VFBGA (10.5x13)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

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FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

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IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABBEAH4-IT:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABBEAH4-IT:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABBEAH4-IT:E TR
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F1G08ABBEAH4-IT:E TR MT29F1G08ABBEAH4-IT:E TR MT29F1G08ABBEAH4-IT:E TR
Product Name Memory - Flash - MT29F1G08ABBEAH4-IT:E TR Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; FLASH Flash; Flash Flash; Non-Volatile
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