Micron Technology, Inc. Memory - Flash - MT29F1G08ABBEAH4:E TR MT29F1G08ABBEAH4:E TR

Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 63-VFBGA (9x11) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 63-VFBGA (9x11) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F1G08ABBEAH4:E TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F1G08ABBEAH4:E TR
Memory - Flash - MT29F1G08ABBEAH4:E TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 63-VFBGA (9x11) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Categories: Integrated Circuits
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 63-VFBGA (9x11)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

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IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABBEAH4:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABBEAH4:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABBEAH4:E TR
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

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Technical Specifications

  Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F1G08ABBEAH4:E TR MT29F1G08ABBEAH4:E TR MT29F1G08ABBEAH4:E TR
Product Name Memory - Flash - MT29F1G08ABBEAH4:E TR Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile Flash; FLASH
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