Micron Technology, Inc. Memory MT29F1G08ABBDAH4:D

Description
IC FLASH 1GBIT PARALLEL 63VFBGA
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Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Request a Quote Datasheet

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IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
Memory - Flash - MT29F1G08ABBDAH4:D -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F1G08ABBDAH4:D
Memory - Flash - MT29F1G08ABBDAH4:D
Manufacturer: Micron Technology Inc. Packaging: Bulk Operating Temperature Range: 0°C ~ 70°C (TA) Package: 63-VFBGA Mounting: SMD Technology: FLASH - NAND Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Non-Volatile Memory Size: 1Gb (128M x 8) Family Name: MT29F1G08ABBDAH4 Categories: Integrated Circuits (ICs) Memory Format: FLASH Memory Interface: Parallel Manufacturer Package: 63-VFBGA (9x11) Alternative Parts (Cross-Reference): HY27SA081G1M-FPIB; HY27SA081G1M-FIP; HY27SA081G1M-FIB; HY27SA081G1M-FPIP; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Singapore Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 63-VFBGA
Mounting: SMD
Technology: FLASH - NAND
Operating Supply Voltage: 1.7 V ~ 1.95 V
Memory Type: Non-Volatile
Memory Size: 1Gb (128M x 8)
Family Name: MT29F1G08ABBDAH4
Categories: Integrated Circuits (ICs)
Memory Format: FLASH
Memory Interface: Parallel
Manufacturer Package: 63-VFBGA (9x11)
Alternative Parts (Cross-Reference): HY27SA081G1M-FPIB; HY27SA081G1M-FIP; HY27SA081G1M-FIB; HY27SA081G1M-FPIP;
Introduction Date: January 01, 2000
ECCN: 3A991.b.1.a
Country of Origin: Singapore
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

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IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Memory - MT29F1G08ABBDAH4:D - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

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Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABBDAH4:D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABBDAH4:D
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABBDAH4:D
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F1G08ABBDAH4:D MT29F1G08ABBDAH4:D MT29F1G08ABBDAH4:D MT29F1G08ABBDAH4:D
Product Name Memory Memory - Flash - MT29F1G08ABBDAH4:D Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH - NAND Flash; Non-Volatile Flash; Flash Flash; FLASH Flash; Non-Volatile
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