Micron Technology, Inc. Memory - Flash - MT29F1G08ABAEAWP-IT:E MT29F1G08ABAEAWP-IT:E

Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Family Name: MT29F1G08ABAEA Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Alternative Parts (Cross-Reference): HY27UA161G1M-TIB; HY27UA161G1M-TPES; HY27UA161G1M-TEP; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Singapore, Taiwan Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Family Name: MT29F1G08ABAEA Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Alternative Parts (Cross-Reference): HY27UA161G1M-TIB; HY27UA161G1M-TPES; HY27UA161G1M-TEP; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Singapore, Taiwan Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F1G08ABAEAWP-IT:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F1G08ABAEAWP-IT:E
Memory - Flash - MT29F1G08ABAEAWP-IT:E
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Family Name: MT29F1G08ABAEA Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Alternative Parts (Cross-Reference): HY27UA161G1M-TIB; HY27UA161G1M-TPES; HY27UA161G1M-TEP; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Singapore, Taiwan Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Family Name: MT29F1G08ABAEA
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): HY27UA161G1M-TIB; HY27UA161G1M-TPES; HY27UA161G1M-TEP;
Introduction Date: January 01, 2000
ECCN: 3A991.b.1.a
Country of Origin: Singapore, Taiwan
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now
IC FLASH 1GBIT PARALLEL 48TSOP I

IC FLASH 1GBIT PARALLEL 48TSOP I

Supplier's Site
Flash Memory, 1Gbit, -40 To 85Deg C; Flash Memory Type Micron - 80AH7659 - Newark, An Avnet Company
Chicago, IL, United States
Flash Memory, 1Gbit, -40 To 85Deg C; Flash Memory Type Micron
80AH7659
Flash Memory, 1Gbit, -40 To 85Deg C; Flash Memory Type Micron 80AH7659
FLASH MEMORY, 1GBIT, -40 TO 85DEG C; Flash Memory Type:SLC NAND; Memory Size:1Gbit; Flash Memory Configuration:128M x 8bit; IC Interface Type:Parallel; Memory Case Style:TSOP-I; No. of Pins:48Pins; Clock Frequency:50MHz RoHS Compliant: Yes

FLASH MEMORY, 1GBIT, -40 TO 85DEG C; Flash Memory Type:SLC NAND; Memory Size:1Gbit; Flash Memory Configuration:128M x 8bit; IC Interface Type:Parallel; Memory Case Style:TSOP-I; No. of Pins:48Pins; Clock Frequency:50MHz RoHS Compliant: Yes

Supplier's Site
Flash Memory, 1Gbit, -40 To 85Deg C Rohs Compliant Micron - 31AK5904 - Newark, An Avnet Company
Chicago, IL, United States
Flash Memory, 1Gbit, -40 To 85Deg C Rohs Compliant Micron
31AK5904
Flash Memory, 1Gbit, -40 To 85Deg C Rohs Compliant Micron 31AK5904
FLASH MEMORY, 1GBIT, -40 TO 85DEG C ROHS COMPLIANT: YES

FLASH MEMORY, 1GBIT, -40 TO 85DEG C ROHS COMPLIANT: YES

Supplier's Site
IC FLASH 1GBIT PARALLEL 48TSOP I

IC FLASH 1GBIT PARALLEL 48TSOP I

Supplier's Site Datasheet
FLASH - NAND Memory IC 1Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 1Gbit Parallel 48-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABAEAWP-IT:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABAEAWP-IT:E
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABAEAWP-IT:E
IC FLASH 1GBIT PARALLEL 48TSOP I

IC FLASH 1GBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F1G08ABAEAWP-IT:E 80AH7659 31AK5904 MT29F1G08ABAEAWP-IT:E MT29F1G08ABAEAWP-IT:E MT29F1G08ABAEAWP-IT:E
Product Name Memory - Flash - MT29F1G08ABAEAWP-IT:E Memory Flash Memory, 1Gbit, -40 To 85Deg C; Flash Memory Type Micron Flash Memory, 1Gbit, -40 To 85Deg C Rohs Compliant Micron Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; FLASH - NAND Flash Flash Flash; Flash Flash; FLASH Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type SOP; 48-TSOP 48-TFSOP (0.724", 18.40mm Width) TSOP-I 48-TFSOP (0.724\", 18.40mm Width)
Supply Voltage 2.7 V ~ 3.6 V 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V 48-TFSOP (0.724, 18.40mm Width)
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