Micron Technology, Inc. Memory - Flash - MT29F1G08ABAEAH4:E MT29F1G08ABAEAH4:E

Description
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting Style: SMD Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Supplier Device Package: 63-VFBGA (9x11) Temperature Range - Operating: 0°C ~ 70°C Memory Format: FLASH Memory Interface: Parallel Manufacturer Package: 63-VFBGA Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Family Part Number: MT29F1G08 Manufacturer Pack Quantity: 1,260 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.7V ~ 3.6V
Request a Quote Datasheet
Description
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting Style: SMD Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Supplier Device Package: 63-VFBGA (9x11) Temperature Range - Operating: 0°C ~ 70°C Memory Format: FLASH Memory Interface: Parallel Manufacturer Package: 63-VFBGA Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Family Part Number: MT29F1G08 Manufacturer Pack Quantity: 1,260 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.7V ~ 3.6V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F1G08ABAEAH4:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F1G08ABAEAH4:E
Memory - Flash - MT29F1G08ABAEAH4:E
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting Style: SMD Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Supplier Device Package: 63-VFBGA (9x11) Temperature Range - Operating: 0°C ~ 70°C Memory Format: FLASH Memory Interface: Parallel Manufacturer Package: 63-VFBGA Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Family Part Number: MT29F1G08 Manufacturer Pack Quantity: 1,260 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.7V ~ 3.6V

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting Style: SMD
Technology: FLASH - NAND
Memory Type: Non-Volatile
Memory Size: 1Gb (128M x 8)
Categories: Integrated Circuits
Supplier Device Package: 63-VFBGA (9x11)
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: FLASH
Memory Interface: Parallel
Manufacturer Package: 63-VFBGA
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Family Part Number: MT29F1G08
Manufacturer Pack Quantity: 1,260
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.7V ~ 3.6V

Buy Now
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
Memory IC and Storage Component - 774-MT29F1G08ABAEAH4:E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT29F1G08ABAEAH4:E
Memory IC and Storage Component 774-MT29F1G08ABAEAH4:E
IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: MT29F1G08ABAEAH4:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G08ABAEAH4 :E can be used for catalog matching and distributor lookup.

IC FLASH 1GBIT PARALLEL 63VFBGA Product overview: MT29F1G08ABAEAH4:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G08ABAEAH4:E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABAEAH4:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABAEAH4:E
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABAEAH4:E
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
Flash Memory, 1Gbit, 0 To 70Deg C; Flash Memory Type Micron - 80AH7656 - Newark, An Avnet Company
Chicago, IL, United States
Flash Memory, 1Gbit, 0 To 70Deg C; Flash Memory Type Micron
80AH7656
Flash Memory, 1Gbit, 0 To 70Deg C; Flash Memory Type Micron 80AH7656
FLASH MEMORY, 1GBIT, 0 TO 70DEG C; Flash Memory Type:SLC NAND; Memory Size:1Gbit; Flash Memory Configuration:128M x 8bit; IC Interface Type:Parallel; Memory Case Style:VFBGA; No. of Pins:63Pins; Clock Frequency:50MHz; Access Time:- RoHS Compliant: Yes

FLASH MEMORY, 1GBIT, 0 TO 70DEG C; Flash Memory Type:SLC NAND; Memory Size:1Gbit; Flash Memory Configuration:128M x 8bit; IC Interface Type:Parallel; Memory Case Style:VFBGA; No. of Pins:63Pins; Clock Frequency:50MHz; Access Time:- RoHS Compliant: Yes

Supplier's Site
Memory - MT29F1G08ABAEAH4:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

Buy Now
Memory - MT29F1G08ABAEAH4:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

Buy Now
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F1G08ABAEAH4:E 774-MT29F1G08ABAEAH4:E MT29F1G08ABAEAH4:E 80AH7656 MT29F1G08ABAEAH4:E MT29F1G08ABAEAH4:E
Product Name Memory - Flash - MT29F1G08ABAEAH4:E Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Flash Memory, 1Gbit, 0 To 70Deg C; Flash Memory Type Micron Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH - NAND Flash; Non-Volatile Flash; Non-Volatile Flash Flash; FLASH Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Supply Voltage 2.7V ~ 3.6V 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V 0degC ~ 70degC (TA) 3.6V; 2.7V ~ 3.6V
Density 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits 1000000 kbits
Package Type 63-VFBGA BGA; Bulk BGA VFBGA BGA; 63-VFBGA
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details