Micron Technology, Inc. Memory MT29F16G08CBECBL72A3WC1P

Description

IC FLASH 16GBIT PARALLEL WAFER

Lingto Electronic Limited
Quarktwin Technology Ltd.

Datasheet

Description

IC FLASH 16GBIT PARALLEL WAFER

Datasheet

Suppliers

Company

Product

Description

Supplier Links

Lingto Electronic Limited

Shenzhen, China

Memory
MT29F16G08CBECBL72A3WC1P

Memory MT29F16G08CBECBL72A3WC1P

IC FLASH 16GBIT PARALLEL WAFER

Supplier's Site

Datasheet

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
MT29F16G08CBECBL72A3WC1P

Memory MT29F16G08CBECBL72A3WC1P

FLASH - NAND Memory IC 16Gbit Parallel Die

Buy Now

Technical Specifications

	Lingto Electronic Limited	Quarktwin Technology Ltd.
Product Category	Memory Chips	Memory Chips
Product Number	MT29F16G08CBECBL72A3WC1P	MT29F16G08CBECBL72A3WC1P
Product Name	Memory	Memory
Memory Category	Flash; Flash	Flash; FLASH

Unlock Full Specs

to access all available technical data

Similar Products

Rochester Electronics

Memory

0436A8ACLAA-5H

Specs

Memory Category SRAM; SRAM Chip

Access Time 4.5 ns

Density 8000 kbits

View Details

Texas Instruments

Memory

93Z451LMQB

Specs

Memory Category PROM; PROM

Access Time 55 ns

Operating Temperature -55 to 125 C (-67 to 257 F)

View Details

2 suppliers

RS Components, Ltd.

Flash Memory

1882540

Specs

Memory Category Flash

Bits per Word 8 bits

Pins 8

View Details

Infineon Technologies AG

Memory

IS29GL128S-10TFV020

Specs

Memory Category Flash; FLASH

Access Time 100 ns

Operating Temperature -40 to 85 C (-40 to 185 F)

View Details

2 suppliers