Micron Technology, Inc. Memory MT29F16G08CBACBWP-12:C

Description
FLASH - NAND Memory IC 16Gbit Parallel 83 MHz 48-TSOP I
Datasheet
Description
FLASH - NAND Memory IC 16Gbit Parallel 83 MHz 48-TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND Memory IC 16Gbit Parallel 83 MHz 48-TSOP I

FLASH - NAND Memory IC 16Gbit Parallel 83 MHz 48-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F16G08CBACBWP-12:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F16G08CBACBWP-12:C
Integrated Circuits (ICs) - Memory - Memory MT29F16G08CBACBWP-12:C
IC FLASH 16GBIT PAR 48TSOP I

IC FLASH 16GBIT PAR 48TSOP I

Supplier's Site
IC FLSH 16GBIT PARALLEL 48TSOP I

IC FLSH 16GBIT PARALLEL 48TSOP I

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F16G08CBACBWP-12:C MT29F16G08CBACBWP-12:C MT29F16G08CBACBWP-12:C
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8858702VA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Density 4 kbits
View Details
Memory - AS5LC1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 9021931 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Integrated Circuits (ICs) - Memory - Memory - 54F189DLQB - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category Volatile
Cycle Time 37.5 ns
Density 0 kbits
View Details
2 suppliers