Micron Technology, Inc. Memory MT29F128G08EBCDBWP-10M:D TR

Description
FLASH - NAND Memory IC 128Gbit Parallel 100 MHz 48-TSOP I
Description
FLASH - NAND Memory IC 128Gbit Parallel 100 MHz 48-TSOP I

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Description
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FLASH - NAND Memory IC 128Gbit Parallel 100 MHz 48-TSOP I

FLASH - NAND Memory IC 128Gbit Parallel 100 MHz 48-TSOP I

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Integrated Circuits (ICs) - Memory - Memory - MT29F128G08EBCDBWP-10M:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F128G08EBCDBWP-10M:D TR
Integrated Circuits (ICs) - Memory - Memory MT29F128G08EBCDBWP-10M:D TR
IC FLASH 128GBIT PAR 48TSOP I

IC FLASH 128GBIT PAR 48TSOP I

Supplier's Site
IC FLASH 128GBIT PAR 48TSOP I

IC FLASH 128GBIT PAR 48TSOP I

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F128G08EBCDBWP-10M:D TR MT29F128G08EBCDBWP-10M:D TR MT29F128G08EBCDBWP-10M:D TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F)
Density 128000000 kbits 128000000 kbits 128000000 kbits
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