Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT29F128G08EBCDBJ4-37ES:D

Description
IC FLASH 128GBIT PAR 132VBGA
Datasheet
Description
IC FLASH 128GBIT PAR 132VBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT29F128G08EBCDBJ4-37ES:D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F128G08EBCDBJ4-37ES:D
Integrated Circuits (ICs) - Memory - Memory MT29F128G08EBCDBJ4-37ES:D
IC FLASH 128GBIT PAR 132VBGA

IC FLASH 128GBIT PAR 132VBGA

Supplier's Site
IC FLASH 128GBIT PAR 132VBGA

IC FLASH 128GBIT PAR 132VBGA

Supplier's Site Datasheet
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F128G08EBCDBJ4-37ES:D MT29F128G08EBCDBJ4-37ES:D MT29F128G08EBCDBJ4-37ES:D
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Data Rate 267 MHz
Density 128000000 kbits 128000000 kbits 128000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71256L25TDB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 256 kbits
View Details
Memory - MYX4DD3K256M16BG1 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
Memory IC and Storage Component - 774-JBP18S030MJ - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category PROM
Operating Temperature -55 C (-67 F)
Density 0 kbits
View Details
4 suppliers
Memory - 28576411 B - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers