Micron Technology, Inc. Memory MT29F128G08EBCDBJ4-37ES:D

Description
IC FLASH 128GBIT PAR 132VBGA
Datasheet
Description
IC FLASH 128GBIT PAR 132VBGA
Datasheet

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Description
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IC FLASH 128GBIT PAR 132VBGA

IC FLASH 128GBIT PAR 132VBGA

Supplier's Site Datasheet
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

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Integrated Circuits (ICs) - Memory - Memory - MT29F128G08EBCDBJ4-37ES:D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F128G08EBCDBJ4-37ES:D
Integrated Circuits (ICs) - Memory - Memory MT29F128G08EBCDBJ4-37ES:D
IC FLASH 128GBIT PAR 132VBGA

IC FLASH 128GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F128G08EBCDBJ4-37ES:D MT29F128G08EBCDBJ4-37ES:D MT29F128G08EBCDBJ4-37ES:D
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Density 128000000 kbits 128000000 kbits 128000000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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