Micron Technology, Inc. Memory MT29F128G08EBCDBJ4-37ES:D TR

Description
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)
  • Memory - MT29F128G08EBCDBJ4-37ES:D TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F128G08EBCDBJ4-37ES:D TR - Lingto Electronic Limited
    Lingto Electronic Limited
Description
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F128G08EBCDBJ4-37ES:D TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F128G08EBCDBJ4-37ES:D TR
Memory MT29F128G08EBCDBJ4-37ES:D TR
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

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Memory - MT29F128G08EBCDBJ4-37ES:D TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F128G08EBCDBJ4-37ES:D TR
Memory MT29F128G08EBCDBJ4-37ES:D TR
IC FLASH 128GBIT PAR 132VBGA

IC FLASH 128GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29F128G08EBCDBJ4-37ES:D TR MT29F128G08EBCDBJ4-37ES:D TR
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
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