Micron Technology, Inc. Memory MT29F128G08CBCEBRT-37B:E TR

Description
IC FLASH 128GBIT PARALLEL 267MHZ
  • Memory - MT29F128G08CBCEBRT-37B:E TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F128G08CBCEBRT-37B:E TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC FLASH 128GBIT PARALLEL 267MHZ

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F128G08CBCEBRT-37B:E TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F128G08CBCEBRT-37B:E TR
Memory MT29F128G08CBCEBRT-37B:E TR
IC FLASH 128GBIT PARALLEL 267MHZ

IC FLASH 128GBIT PARALLEL 267MHZ

Supplier's Site
Memory - MT29F128G08CBCEBRT-37B:E TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F128G08CBCEBRT-37B:E TR
Memory MT29F128G08CBCEBRT-37B:E TR
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz

FLASH - NAND Memory IC 128Gbit Parallel 267 MHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29F128G08CBCEBRT-37B:E TR MT29F128G08CBCEBRT-37B:E TR
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - Memory - Controllers - BQ2204ASNTRG4 - 1154091-BQ2204ASNTRG4 - Win Source Electronics
Texas Instruments
Memory - Memory - Controllers - BQ2204ASNTRG4
BQ2204ASNTRG4
Specs
Memory Category SRAM Chip
View Details
Memory - 6116LA25TBD - Lingto Electronic Limited
Rochester Electronics
Memory
6116LA25TBD
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 16 kbits
View Details
Memory - 8 905 506 731 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
8 905 506 731
View Details
2 suppliers
SDRAM - 2420776 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420776
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details