Micron Technology, Inc. Memory MT29F128G08CBCEBRT-37B:E TR

Description
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz
  • Memory - MT29F128G08CBCEBRT-37B:E TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F128G08CBCEBRT-37B:E TR - Lingto Electronic Limited
    Lingto Electronic Limited
Description
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F128G08CBCEBRT-37B:E TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F128G08CBCEBRT-37B:E TR
Memory MT29F128G08CBCEBRT-37B:E TR
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz

FLASH - NAND Memory IC 128Gbit Parallel 267 MHz

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Memory - MT29F128G08CBCEBRT-37B:E TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F128G08CBCEBRT-37B:E TR
Memory MT29F128G08CBCEBRT-37B:E TR
IC FLASH 128GBIT PARALLEL 267MHZ

IC FLASH 128GBIT PARALLEL 267MHZ

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29F128G08CBCEBRT-37B:E TR MT29F128G08CBCEBRT-37B:E TR
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
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