Micron Technology, Inc. Memory MT29F128G08CBCEBRT-37B:E TR

Description
IC FLASH 128GBIT PARALLEL 267MHZ
  • Memory - MT29F128G08CBCEBRT-37B:E TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F128G08CBCEBRT-37B:E TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC FLASH 128GBIT PARALLEL 267MHZ

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F128G08CBCEBRT-37B:E TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F128G08CBCEBRT-37B:E TR
Memory MT29F128G08CBCEBRT-37B:E TR
IC FLASH 128GBIT PARALLEL 267MHZ

IC FLASH 128GBIT PARALLEL 267MHZ

Supplier's Site
Memory - MT29F128G08CBCEBRT-37B:E TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F128G08CBCEBRT-37B:E TR
Memory MT29F128G08CBCEBRT-37B:E TR
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz

FLASH - NAND Memory IC 128Gbit Parallel 267 MHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29F128G08CBCEBRT-37B:E TR MT29F128G08CBCEBRT-37B:E TR
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - Flash - RD38F2240WWZDQ0 - 891538-RD38F2240WWZDQ0 - Win Source Electronics
Rochester Electronics
Memory - Flash - RD38F2240WWZDQ0
RD38F2240WWZDQ0
Specs
Memory Category Flash
View Details
2 suppliers
Memory - S25FL064P0XNFV001M - Lingto Electronic Limited
Infineon Technologies AG
Memory
S25FL064P0XNFV001M
Specs
Memory Category Flash; Flash
Density 64000 kbits
View Details
2 suppliers
- 93L422DM - Rochester Electronics
Texas Instruments
Memory
93L422DM
Specs
Memory Category SRAM Chip
Package Type DIP; CDIP22
View Details
3 suppliers
Memory - AS8F512K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8F512K32
Specs
Memory Category FLASH
Access Time 70 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details