Micron Technology, Inc. Memory MT29F128G08CBCEBJ4-37:E TR

Description
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)
Description
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

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Description
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FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

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Integrated Circuits (ICs) - Memory - Memory - MT29F128G08CBCEBJ4-37:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F128G08CBCEBJ4-37:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F128G08CBCEBJ4-37:E TR
IC FLASH 128GBIT PAR 132VBGA

IC FLASH 128GBIT PAR 132VBGA

Supplier's Site
IC FLASH 128GBIT PAR 132VBGA

IC FLASH 128GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F128G08CBCEBJ4-37:E TR MT29F128G08CBCEBJ4-37:E TR MT29F128G08CBCEBJ4-37:E TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F)
Density 128000000 kbits 128000000 kbits 128000000 kbits
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