Micron Technology, Inc. Memory MT29F128G08CBCEBJ4-37:E TR

Description
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)
Description
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

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Description
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FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

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IC FLASH 128GBIT PAR 132VBGA

IC FLASH 128GBIT PAR 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F128G08CBCEBJ4-37:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F128G08CBCEBJ4-37:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F128G08CBCEBJ4-37:E TR
IC FLASH 128GBIT PAR 132VBGA

IC FLASH 128GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F128G08CBCEBJ4-37:E TR MT29F128G08CBCEBJ4-37:E TR MT29F128G08CBCEBJ4-37:E TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F)
Density 128000000 kbits 128000000 kbits 128000000 kbits
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