Micron Technology, Inc. Memory MT29F128G08CBCABL85A3WC1-M

Description
MLC 128G DIE 16GX8
  • Memory - MT29F128G08CBCABL85A3WC1-M - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F128G08CBCABL85A3WC1-M - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
MLC 128G DIE 16GX8
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F128G08CBCABL85A3WC1-M - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F128G08CBCABL85A3WC1-M
Memory MT29F128G08CBCABL85A3WC1-M
MLC 128G DIE 16GX8

MLC 128G DIE 16GX8

Supplier's Site Datasheet
Memory - MT29F128G08CBCABL85A3WC1-M - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F128G08CBCABL85A3WC1-M
Memory MT29F128G08CBCABL85A3WC1-M
FLASH - NAND Memory IC 128Gbit Parallel Die

FLASH - NAND Memory IC 128Gbit Parallel Die

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29F128G08CBCABL85A3WC1-M MT29F128G08CBCABL85A3WC1-M
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882864P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882864P
Specs
Memory Category Flash
Density 1024000 kbits
Package Type WSON
View Details
- 93425DMQB40 - Rochester Electronics
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
93425DMQB40
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type DIP; CDIP16
View Details
3 suppliers
Memory - 63608701 - Lingto Electronic Limited
Infineon Technologies AG
Memory
63608701
View Details
2 suppliers
Memory - MYXX28HC256 - Micross Components, Inc.
Micross Components, Inc.
Memory
MYXX28HC256
Specs
Memory Category EEPROM; EEPROM
Access Time 70 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details