Micron Technology, Inc. IT infrastructure Memory MT29F128G08AUCBBH3-12:B

Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
Request a Quote Datasheet
Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory -  - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
IT infrastructure Memory
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Manufacturer: Micron Technology Inc.

Buy Now
IC FLASH 128GBIT PAR 100LBGA

IC FLASH 128GBIT PAR 100LBGA

Supplier's Site Datasheet
FLASH - NAND Memory IC 128Gbit Parallel 83 MHz 100-LBGA (12x18)

FLASH - NAND Memory IC 128Gbit Parallel 83 MHz 100-LBGA (12x18)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F128G08AUCBBH3-12:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F128G08AUCBBH3-12:B
Integrated Circuits (ICs) - Memory - Memory MT29F128G08AUCBBH3-12:B
IC FLASH 128GBIT PAR 100LBGA

IC FLASH 128GBIT PAR 100LBGA

Supplier's Site

Technical Specifications

  Win Source Electronics Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F128G08AUCBBH3-12:B MT29F128G08AUCBBH3-12:B MT29F128G08AUCBBH3-12:B
Product Name IT infrastructure Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash; Flash Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5SP512K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096 kbits
View Details
Flash Memory - 1882657 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - 28C64A-20/J - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 200 ns
Density 64 kbits
View Details