Micron Technology, Inc. Memory MT29E768G08EEHBBJ4-3:B TR

Description
IC FLASH 768GBIT PAR 132VBGA
Description
IC FLASH 768GBIT PAR 132VBGA

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IC FLASH 768GBIT PAR 132VBGA

IC FLASH 768GBIT PAR 132VBGA

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FLASH - NAND Memory IC 768Gbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 768Gbit Parallel 333 MHz 132-VBGA (12x18)

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Integrated Circuits (ICs) - Memory - Memory - MT29E768G08EEHBBJ4-3:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E768G08EEHBBJ4-3:B TR
Integrated Circuits (ICs) - Memory - Memory MT29E768G08EEHBBJ4-3:B TR
IC FLASH 768GBIT PAR 132VBGA

IC FLASH 768GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29E768G08EEHBBJ4-3:B TR MT29E768G08EEHBBJ4-3:B TR MT29E768G08EEHBBJ4-3:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Density 768000000 kbits 768000000 kbits 768000000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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