Micron Technology, Inc. Memory - Flash - MT29E6T08ETHBBM5-3:B MT29E6T08ETHBBM5-3:B

Description
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 70°C (TA) Features: FLASH - NAND Memory IC 6Tb (768G x 8) Parallel 333 MHz Package: Tray Part Status: Obsolete Categories: Integrated Circuits (ICs) ECCN: 3A991B1A Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Limited Quantity per package: 1120 REACH Status: REACH Unaffected HTSUS: 8542.32.0071
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Description
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 70°C (TA) Features: FLASH - NAND Memory IC 6Tb (768G x 8) Parallel 333 MHz Package: Tray Part Status: Obsolete Categories: Integrated Circuits (ICs) ECCN: 3A991B1A Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Limited Quantity per package: 1120 REACH Status: REACH Unaffected HTSUS: 8542.32.0071
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29E6T08ETHBBM5-3:B -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29E6T08ETHBBM5-3:B
Memory - Flash - MT29E6T08ETHBBM5-3:B
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 70°C (TA) Features: FLASH - NAND Memory IC 6Tb (768G x 8) Parallel 333 MHz Package: Tray Part Status: Obsolete Categories: Integrated Circuits (ICs) ECCN: 3A991B1A Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Limited Quantity per package: 1120 REACH Status: REACH Unaffected HTSUS: 8542.32.0071

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 70°C (TA)
Features: FLASH - NAND Memory IC 6Tb (768G x 8) Parallel 333 MHz
Package: Tray
Part Status: Obsolete
Categories: Integrated Circuits (ICs)
ECCN: 3A991B1A
Popularity: Medium
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Limited
Quantity per package: 1120
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071

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333MHZ Memory IC and Storage Component - 774-MT29E6T08ETHBBM5-3:B - ERSAELECTRONICS PTE. LTD.
Singapore
333MHZ Memory IC and Storage Component
774-MT29E6T08ETHBBM5-3:B
333MHZ Memory IC and Storage Component 774-MT29E6T08ETHBBM5-3:B
IC FLASH 6TBIT PARALLEL 333MHZ Product overview: MT29E6T08ETHBBM5-3:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 333MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 333MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29E6T08ETHBBM5 -3:B can be used for catalog matching and distributor lookup.

IC FLASH 6TBIT PARALLEL 333MHZ Product overview: MT29E6T08ETHBBM5-3:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 333MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 333MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29E6T08ETHBBM5-3:B can be used for catalog matching and distributor lookup.

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E6T08ETHBBM5-3:B
Integrated Circuits (ICs) - Memory - Memory MT29E6T08ETHBBM5-3:B
IC FLASH 6TBIT PARALLEL 333MHZ

IC FLASH 6TBIT PARALLEL 333MHZ

Supplier's Site
Memory - MT29E6T08ETHBBM5-3:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 6Tbit Parallel 333 MHz

FLASH - NAND Memory IC 6Tbit Parallel 333 MHz

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IC FLASH 6TB PARALLEL 333MHZ

IC FLASH 6TB PARALLEL 333MHZ

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT29E6T08ETHBBM5-3:B MT29E6T08ETHBBM5-3:B MT29E6T08ETHBBM5-3:B MT29E6T08ETHBBM5-3:B
Product Name Memory - Flash - MT29E6T08ETHBBM5-3:B 333MHZ Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; Non-Volatile Flash; FLASH Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type Tray
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