Micron Technology, Inc. Memory - Flash - MT29E6T08ETHBBM5-3:B MT29E6T08ETHBBM5-3:B

Description
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 70°C (TA) Features: FLASH - NAND Memory IC 6Tb (768G x 8) Parallel 333 MHz Package: Tray Part Status: Obsolete Categories: Integrated Circuits (ICs) ECCN: 3A991B1A Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Limited Quantity per package: 1120 REACH Status: REACH Unaffected HTSUS: 8542.32.0071
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Description
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 70°C (TA) Features: FLASH - NAND Memory IC 6Tb (768G x 8) Parallel 333 MHz Package: Tray Part Status: Obsolete Categories: Integrated Circuits (ICs) ECCN: 3A991B1A Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Limited Quantity per package: 1120 REACH Status: REACH Unaffected HTSUS: 8542.32.0071
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29E6T08ETHBBM5-3:B -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29E6T08ETHBBM5-3:B
Memory - Flash - MT29E6T08ETHBBM5-3:B
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 70°C (TA) Features: FLASH - NAND Memory IC 6Tb (768G x 8) Parallel 333 MHz Package: Tray Part Status: Obsolete Categories: Integrated Circuits (ICs) ECCN: 3A991B1A Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Limited Quantity per package: 1120 REACH Status: REACH Unaffected HTSUS: 8542.32.0071

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 70°C (TA)
Features: FLASH - NAND Memory IC 6Tb (768G x 8) Parallel 333 MHz
Package: Tray
Part Status: Obsolete
Categories: Integrated Circuits (ICs)
ECCN: 3A991B1A
Popularity: Medium
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Limited
Quantity per package: 1120
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071

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Memory - MT29E6T08ETHBBM5-3:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 6Tbit Parallel 333 MHz

FLASH - NAND Memory IC 6Tbit Parallel 333 MHz

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IC FLASH 6TB PARALLEL 333MHZ

IC FLASH 6TB PARALLEL 333MHZ

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E6T08ETHBBM5-3:B
Integrated Circuits (ICs) - Memory - Memory MT29E6T08ETHBBM5-3:B
IC FLASH 6TBIT PARALLEL 333MHZ

IC FLASH 6TBIT PARALLEL 333MHZ

Supplier's Site

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29E6T08ETHBBM5-3:B MT29E6T08ETHBBM5-3:B MT29E6T08ETHBBM5-3:B
Product Name Memory - Flash - MT29E6T08ETHBBM5-3:B Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash; FLASH Flash; Flash Flash; Non-Volatile
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