Micron Technology, Inc. Memory MT29E4T08EYHBBG9-3ES:B

Description
FLASH - NAND Memory IC 4Tbit Parallel 333 MHz
  • Memory - MT29E4T08EYHBBG9-3ES:B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29E4T08EYHBBG9-3ES:B - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NAND Memory IC 4Tbit Parallel 333 MHz
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29E4T08EYHBBG9-3ES:B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29E4T08EYHBBG9-3ES:B
Memory MT29E4T08EYHBBG9-3ES:B
FLASH - NAND Memory IC 4Tbit Parallel 333 MHz

FLASH - NAND Memory IC 4Tbit Parallel 333 MHz

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Memory - MT29E4T08EYHBBG9-3ES:B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29E4T08EYHBBG9-3ES:B
Memory MT29E4T08EYHBBG9-3ES:B
IC FLASH 4TB PARALLEL 333MHZ

IC FLASH 4TB PARALLEL 333MHZ

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29E4T08EYHBBG9-3ES:B MT29E4T08EYHBBG9-3ES:B
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
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