Micron Technology, Inc. Memory MT29E4T08EYHBBG9-3ES:B

Description
IC FLASH 4TB PARALLEL 333MHZ
  • Memory - MT29E4T08EYHBBG9-3ES:B - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29E4T08EYHBBG9-3ES:B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH 4TB PARALLEL 333MHZ
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29E4T08EYHBBG9-3ES:B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29E4T08EYHBBG9-3ES:B
Memory MT29E4T08EYHBBG9-3ES:B
IC FLASH 4TB PARALLEL 333MHZ

IC FLASH 4TB PARALLEL 333MHZ

Supplier's Site Datasheet
Memory - MT29E4T08EYHBBG9-3ES:B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29E4T08EYHBBG9-3ES:B
Memory MT29E4T08EYHBBG9-3ES:B
FLASH - NAND Memory IC 4Tbit Parallel 333 MHz

FLASH - NAND Memory IC 4Tbit Parallel 333 MHz

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29E4T08EYHBBG9-3ES:B MT29E4T08EYHBBG9-3ES:B
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
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