Micron Technology, Inc. Memory MT29E4T08EYHBBG9-3ES:B

Description
FLASH - NAND Memory IC 4Tbit Parallel 333 MHz
  • Memory - MT29E4T08EYHBBG9-3ES:B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29E4T08EYHBBG9-3ES:B - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NAND Memory IC 4Tbit Parallel 333 MHz
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29E4T08EYHBBG9-3ES:B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29E4T08EYHBBG9-3ES:B
Memory MT29E4T08EYHBBG9-3ES:B
FLASH - NAND Memory IC 4Tbit Parallel 333 MHz

FLASH - NAND Memory IC 4Tbit Parallel 333 MHz

Buy Now
Memory - MT29E4T08EYHBBG9-3ES:B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29E4T08EYHBBG9-3ES:B
Memory MT29E4T08EYHBBG9-3ES:B
IC FLASH 4TB PARALLEL 333MHZ

IC FLASH 4TB PARALLEL 333MHZ

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29E4T08EYHBBG9-3ES:B MT29E4T08EYHBBG9-3ES:B
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - PAL16H2AJ/883 - Quarktwin Technology Ltd.
Texas Instruments
Memory
PAL16H2AJ/883
View Details
2 suppliers
Flash Memory - 1882811 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882811
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - AS4DDR232M72A - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4DDR232M72A
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
Memory - 5962-9089903MYA - Lingto Electronic Limited
Rochester Electronics
Memory
5962-9089903MYA
View Details