Micron Technology, Inc. Memory MT29E4T08EYHBBG9-3ES:B

Description

IC FLASH 4TB PARALLEL 333MHZ

Lingto Electronic Limited
Quarktwin Technology Ltd.

Datasheet

Description

IC FLASH 4TB PARALLEL 333MHZ

Datasheet

Suppliers

Company

Product

Description

Supplier Links

Lingto Electronic Limited

Shenzhen, China

Memory
MT29E4T08EYHBBG9-3ES:B

Memory MT29E4T08EYHBBG9-3ES:B

IC FLASH 4TB PARALLEL 333MHZ

Supplier's Site

Datasheet

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
MT29E4T08EYHBBG9-3ES:B

Memory MT29E4T08EYHBBG9-3ES:B

FLASH - NAND Memory IC 4Tbit Parallel 333 MHz

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Technical Specifications

	Lingto Electronic Limited	Quarktwin Technology Ltd.
Product Category	Memory Chips	Memory Chips
Product Number	MT29E4T08EYHBBG9-3ES:B	MT29E4T08EYHBBG9-3ES:B
Product Name	Memory	Memory
Memory Category	Flash; Flash	Flash; FLASH

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