Micron Technology, Inc. Memory MT29E384G08EBHBBJ4-3ES:B TR

Description
IC FLASH 384GBIT PAR 132VBGA
Description
IC FLASH 384GBIT PAR 132VBGA

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Company
Product
Description
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IC FLASH 384GBIT PAR 132VBGA

IC FLASH 384GBIT PAR 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29E384G08EBHBBJ4-3ES:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E384G08EBHBBJ4-3ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29E384G08EBHBBJ4-3ES:B TR
IC FLASH 384GBIT PAR 132VBGA

IC FLASH 384GBIT PAR 132VBGA

Supplier's Site
FLASH - NAND Memory IC 384Gbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 384Gbit Parallel 333 MHz 132-VBGA (12x18)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29E384G08EBHBBJ4-3ES:B TR MT29E384G08EBHBBJ4-3ES:B TR MT29E384G08EBHBBJ4-3ES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Density 384000000 kbits 384000000 kbits 384000000 kbits
Data Rate 333 MHz
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