Micron Technology, Inc. Memory MT29E2T08CUHBBM4-3:B TR

Description
IC FLASH 2TB PARALLEL 333MHZ
Description
IC FLASH 2TB PARALLEL 333MHZ

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 2TB PARALLEL 333MHZ

IC FLASH 2TB PARALLEL 333MHZ

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E2T08CUHBBM4-3:B TR
Integrated Circuits (ICs) - Memory - Memory MT29E2T08CUHBBM4-3:B TR
IC FLASH 2TBIT PARALLEL 333MHZ

IC FLASH 2TBIT PARALLEL 333MHZ

Supplier's Site
FLASH - NAND Memory IC 2Tbit Parallel 333 MHz

FLASH - NAND Memory IC 2Tbit Parallel 333 MHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29E2T08CUHBBM4-3:B TR MT29E2T08CUHBBM4-3:B TR MT29E2T08CUHBBM4-3:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

 - 27S29DC - Rochester Electronics
Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; CDIP
View Details
4 suppliers
Memory IC and Storage Component - 736-DP8422AV-25 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 C (32 F)
Address Bus Width 22 bits
View Details
4 suppliers
Quad Memory IC and Storage Component - 2020-S25FL032P0XBHIS20 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash; Non-Volatile
Cycle Time 5000 to 3.00E6 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - MYXxxSMS04GP32xxx-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details