Micron Technology, Inc. Memory MT29E2T08CUHBBM4-3:B TR

Description
IC FLASH 2TB PARALLEL 333MHZ
Description
IC FLASH 2TB PARALLEL 333MHZ

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 2TB PARALLEL 333MHZ

IC FLASH 2TB PARALLEL 333MHZ

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E2T08CUHBBM4-3:B TR
Integrated Circuits (ICs) - Memory - Memory MT29E2T08CUHBBM4-3:B TR
IC FLASH 2TBIT PARALLEL 333MHZ

IC FLASH 2TBIT PARALLEL 333MHZ

Supplier's Site
FLASH - NAND Memory IC 2Tbit Parallel 333 MHz

FLASH - NAND Memory IC 2Tbit Parallel 333 MHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29E2T08CUHBBM4-3:B TR MT29E2T08CUHBBM4-3:B TR MT29E2T08CUHBBM4-3:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - EEPROM - 5962-3826701MXAC7200 - 907565-5962-3826701MXAC7200 - Win Source Electronics
Specs
Memory Category EEPROM
View Details
2 suppliers
Memory - AS5C512K8 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
 - LP3913SQ-AU/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
SDRAM - 2420777 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details