Micron Technology, Inc. Memory MT29E256G08CBHBBJ4-3ES:B

Description
IC FLASH 256GBIT PAR 132VBGA
Datasheet
Description
IC FLASH 256GBIT PAR 132VBGA
Datasheet

Suppliers

Company
Product
Description
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IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29E256G08CBHBBJ4-3ES:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E256G08CBHBBJ4-3ES:B
Integrated Circuits (ICs) - Memory - Memory MT29E256G08CBHBBJ4-3ES:B
IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site
FLASH - NAND Memory IC 256Gbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 256Gbit Parallel 333 MHz 132-VBGA (12x18)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29E256G08CBHBBJ4-3ES:B MT29E256G08CBHBBJ4-3ES:B MT29E256G08CBHBBJ4-3ES:B
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Density 256000000 kbits 256000000 kbits 256000000 kbits
Data Rate 333 MHz
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