Micron Technology, Inc. Memory MT29E256G08CBHBBJ4-3ES:B

Description
IC FLASH 256GBIT PAR 132VBGA
Datasheet
Description
IC FLASH 256GBIT PAR 132VBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29E256G08CBHBBJ4-3ES:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E256G08CBHBBJ4-3ES:B
Integrated Circuits (ICs) - Memory - Memory MT29E256G08CBHBBJ4-3ES:B
IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site
FLASH - NAND Memory IC 256Gbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 256Gbit Parallel 333 MHz 132-VBGA (12x18)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29E256G08CBHBBJ4-3ES:B MT29E256G08CBHBBJ4-3ES:B MT29E256G08CBHBBJ4-3ES:B
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Density 256000000 kbits 256000000 kbits 256000000 kbits
Data Rate 333 MHz
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