Micron Technology, Inc. Memory MT29E256G08CBHBBJ4-3ES:B

Description
IC FLASH 256GBIT PAR 132VBGA
Datasheet
Description
IC FLASH 256GBIT PAR 132VBGA
Datasheet

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IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site Datasheet
FLASH - NAND Memory IC 256Gbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 256Gbit Parallel 333 MHz 132-VBGA (12x18)

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Integrated Circuits (ICs) - Memory - Memory - MT29E256G08CBHBBJ4-3ES:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E256G08CBHBBJ4-3ES:B
Integrated Circuits (ICs) - Memory - Memory MT29E256G08CBHBBJ4-3ES:B
IC FLASH 256GBIT PAR 132VBGA

IC FLASH 256GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29E256G08CBHBBJ4-3ES:B MT29E256G08CBHBBJ4-3ES:B MT29E256G08CBHBBJ4-3ES:B
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Density 256000000 kbits 256000000 kbits 256000000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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