Micron Technology, Inc. Memory IC and Storage Component MT29E1T208ECHBBJ4-3:B

Description
IC FLASH 1.125T PARALLEL 132VBGA Product overview: MT29E1T208ECHBBJ4-3: B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29E1T208ECHBBJ 4-3:B can be used for catalog matching and distributor lookup.
  • Memory IC and Storage Component - 774-MT29E1T208ECHBBJ4-3:B - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - Flash - MT29E1T208ECHBBJ4-3:B - Win Source Electronics
    Win Source Electronics
  • Memory - MT29E1T208ECHBBJ4-3:B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29E1T208ECHBBJ4-3:B - Lingto Electronic Limited
    Lingto Electronic Limited
  • Integrated Circuits (ICs) - Memory - Memory - MT29E1T208ECHBBJ4-3:B - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
IC FLASH 1.125T PARALLEL 132VBGA Product overview: MT29E1T208ECHBBJ4-3: B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29E1T208ECHBBJ 4-3:B can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 774-MT29E1T208ECHBBJ4-3:B - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT29E1T208ECHBBJ4-3:B
Memory IC and Storage Component 774-MT29E1T208ECHBBJ4-3:B
IC FLASH 1.125T PARALLEL 132VBGA Product overview: MT29E1T208ECHBBJ4-3: B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29E1T208ECHBBJ 4-3:B can be used for catalog matching and distributor lookup.

IC FLASH 1.125T PARALLEL 132VBGA Product overview: MT29E1T208ECHBBJ4-3:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29E1T208ECHBBJ4-3:B can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - Flash - MT29E1T208ECHBBJ4-3:B - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29E1T208ECHBBJ4-3:B
Memory - Flash - MT29E1T208ECHBBJ4-3:B
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 70°C (TA) Features: FLASH - NAND Memory IC 1.125Tb (144G x 8) Parallel 132-VBGA (12x18) Package: Tray Package: 132-VBGA Mounting: Surface Mount Part Status: Obsolete Categories: Integrated Circuits (ICs) Case / Package: 132-VBGA (12x18) ECCN: 3A991B1A Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Quantity per package: 1120 REACH Status: REACH Unaffected HTSUS: 8542.32.0071

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 70°C (TA)
Features: FLASH - NAND Memory IC 1.125Tb (144G x 8) Parallel 132-VBGA (12x18)
Package: Tray
Package: 132-VBGA
Mounting: Surface Mount
Part Status: Obsolete
Categories: Integrated Circuits (ICs)
Case / Package: 132-VBGA (12x18)
ECCN: 3A991B1A
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 1120
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071

Buy Now
Memory - MT29E1T208ECHBBJ4-3:B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29E1T208ECHBBJ4-3:B
Memory MT29E1T208ECHBBJ4-3:B
FLASH - NAND Memory IC 1.125Tbit Parallel 132-VBGA (12x18)

FLASH - NAND Memory IC 1.125Tbit Parallel 132-VBGA (12x18)

Buy Now
Memory - MT29E1T208ECHBBJ4-3:B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29E1T208ECHBBJ4-3:B
Memory MT29E1T208ECHBBJ4-3:B
IC FLASH 1.125T PARALLEL 132VBGA

IC FLASH 1.125T PARALLEL 132VBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29E1T208ECHBBJ4-3:B - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E1T208ECHBBJ4-3:B
Integrated Circuits (ICs) - Memory - Memory MT29E1T208ECHBBJ4-3:B
IC FLASH 1.125T PARALLEL 132VBGA

IC FLASH 1.125T PARALLEL 132VBGA

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT29E1T208ECHBBJ4-3:B MT29E1T208ECHBBJ4-3:B MT29E1T208ECHBBJ4-3:B MT29E1T208ECHBBJ4-3:B
Product Name Memory IC and Storage Component Memory - Flash - MT29E1T208ECHBBJ4-3:B Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Non-Volatile Flash Flash; FLASH Flash; Flash Flash; Non-Volatile
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