Micron Technology, Inc. Memory MT29E1T08CMHBBJ4-3ES:B TR

Description
FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)
Description
FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

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Description
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FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

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Integrated Circuits (ICs) - Memory - Memory - MT29E1T08CMHBBJ4-3ES:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E1T08CMHBBJ4-3ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29E1T08CMHBBJ4-3ES:B TR
IC FLASH 1TBIT PARALLEL 132VBGA

IC FLASH 1TBIT PARALLEL 132VBGA

Supplier's Site
IC FLASH 1TB PARALLEL 132VBGA

IC FLASH 1TB PARALLEL 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29E1T08CMHBBJ4-3ES:B TR MT29E1T08CMHBBJ4-3ES:B TR MT29E1T08CMHBBJ4-3ES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1000000000 kbits 1000000000 kbits 1000000000 kbits
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