Micron Technology, Inc. Memory MT29E1T08CMHBBJ4-3:B TR

Description
IC FLASH 1TB PARALLEL 132VBGA
Description
IC FLASH 1TB PARALLEL 132VBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1TB PARALLEL 132VBGA

IC FLASH 1TB PARALLEL 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29E1T08CMHBBJ4-3:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E1T08CMHBBJ4-3:B TR
Integrated Circuits (ICs) - Memory - Memory MT29E1T08CMHBBJ4-3:B TR
IC FLASH 1TBIT PARALLEL 132VBGA

IC FLASH 1TBIT PARALLEL 132VBGA

Supplier's Site
FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29E1T08CMHBBJ4-3:B TR MT29E1T08CMHBBJ4-3:B TR MT29E1T08CMHBBJ4-3:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Density 1000000000 kbits 1000000000 kbits 1000000000 kbits
Data Rate 333 MHz
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712222P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details
Memory - 40060246 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - MYX4DDR364M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Access Time 1.07 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details
 - 27S07ADM/B - Rochester Electronics
Specs
Memory Category SRAM Chip
Package Type DIP; CDIP16
View Details
4 suppliers