Micron Technology, Inc. Memory MT29E1T08CMHBBJ4-3:B TR

Description
IC FLASH 1TB PARALLEL 132VBGA
Description
IC FLASH 1TB PARALLEL 132VBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1TB PARALLEL 132VBGA

IC FLASH 1TB PARALLEL 132VBGA

Supplier's Site
FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29E1T08CMHBBJ4-3:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E1T08CMHBBJ4-3:B TR
Integrated Circuits (ICs) - Memory - Memory MT29E1T08CMHBBJ4-3:B TR
IC FLASH 1TBIT PARALLEL 132VBGA

IC FLASH 1TBIT PARALLEL 132VBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29E1T08CMHBBJ4-3:B TR MT29E1T08CMHBBJ4-3:B TR MT29E1T08CMHBBJ4-3:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Density 1000000000 kbits 1000000000 kbits 1000000000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - IS29GL256S-10DHB023 - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers
Memory - AS4C1259 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 100 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882811 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details