Micron Technology, Inc. Memory MT29C8G48MAZAPBJA-5 IT TR

Description
IC FLASH RAM 8GBIT PAR 137TFBGA
  • Memory - MT29C8G48MAZAPBJA-5 IT TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29C8G48MAZAPBJA-5 IT TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC FLASH RAM 8GBIT PAR 137TFBGA

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29C8G48MAZAPBJA-5 IT TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29C8G48MAZAPBJA-5 IT TR
Memory MT29C8G48MAZAPBJA-5 IT TR
IC FLASH RAM 8GBIT PAR 137TFBGA

IC FLASH RAM 8GBIT PAR 137TFBGA

Supplier's Site
Memory - MT29C8G48MAZAPBJA-5 IT TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29C8G48MAZAPBJA-5 IT TR
Memory MT29C8G48MAZAPBJA-5 IT TR
FLASH - NAND, Mobile LPDRAM Memory IC 8Gbit (NAND), 2Gbit (LPDRAM) Parallel 200 MHz 137-TFBGA (10.5x13)

FLASH - NAND, Mobile LPDRAM Memory IC 8Gbit (NAND), 2Gbit (LPDRAM) Parallel 200 MHz 137-TFBGA (10.5x13)

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29C8G48MAZAPBJA-5 IT TR MT29C8G48MAZAPBJA-5 IT TR
Product Name Memory Memory
Memory Category Flash; FLASH, RAM Flash; FLASH, RAM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8852503ZA - Lingto Electronic Limited
Rochester Electronics
Memory
5962-8852503ZA
Specs
Memory Category EEPROM; EEPROM
Access Time 250 ns
Density 256 kbits
View Details
Memory - MYX4DD3K128M72PBG2 - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DD3K128M72PBG2
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024000 kbits
View Details
Memory - NM27C020T200 - Quarktwin Technology Ltd.
Texas Instruments
Memory
NM27C020T200
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers
Quad Memory IC and Storage Component - 774-S25FL064LABNFB040 - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Quad Memory IC and Storage Component
S25FL064LABNFB040
Specs
Memory Category Flash
Access Time 8 ns
Endurance 100000 Write/Erase Cycles
View Details
5 suppliers