Micron Technology, Inc. Memory MT28F800B3WG-9 B TR

Description
FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Parallel 90ns 48-TSOP I
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Description
FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Parallel 90ns 48-TSOP I
Request a Quote
Datasheet
Datasheet Summary
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The MT28F800B3WG-9 B TR is an 8Mbit flash memory device from Quarktwin Technology Ltd., featuring a dual supply voltage operation of 3.3V for VCC and 5V for VPP during application programming. It utilizes advanced 0.18¬µm CMOS floating-gate technology and offers an access time of 90ns. The memory is organized into eleven erasable blocks, including a protected boot block for critical firmware storage, ensuring data integrity during operations. The device supports 100,000 erase cycles and is fully TTL-compatible, making it suitable for various applications. It is available in multiple packaging options, including a 48-pin TSOP Type I configuration. The operating temperature range extends from 0¬?C to +70¬?C for commercial applications and -40¬?C to +85¬?C for extended applications.

Datasheet Summary
Powered by GS/AI

The MT28F800B3WG-9 B TR is an 8Mbit flash memory device from Quarktwin Technology Ltd., featuring a dual supply voltage operation of 3.3V for VCC and 5V for VPP during application programming. It utilizes advanced 0.18¬µm CMOS floating-gate technology and offers an access time of 90ns. The memory is organized into eleven erasable blocks, including a protected boot block for critical firmware storage, ensuring data integrity during operations. The device supports 100,000 erase cycles and is fully TTL-compatible, making it suitable for various applications. It is available in multiple packaging options, including a 48-pin TSOP Type I configuration. The operating temperature range extends from 0¬?C to +70¬?C for commercial applications and -40¬?C to +85¬?C for extended applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - MT28F800B3WG-9BTR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Parallel 90ns 48-TSOP I

FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Parallel 90ns 48-TSOP I

Buy Now Datasheet
Memory - MT28F800B3WG-9 B TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 8Mbit Parallel 90 ns 48-TSOP I

FLASH - NOR Memory IC 8Mbit Parallel 90 ns 48-TSOP I

Buy Now Datasheet
IC FLASH 8MBIT PARALLEL 48TSOP I

IC FLASH 8MBIT PARALLEL 48TSOP I

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT28F800B3WG-9 B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT28F800B3WG-9 B TR
Integrated Circuits (ICs) - Memory - Memory MT28F800B3WG-9 B TR
IC FLASH 8MBIT PARALLEL 48TSOP I

IC FLASH 8MBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT28F800B3WG-9BTR-ND MT28F800B3WG-9 B TR MT28F800B3WG-9 B TR MT28F800B3WG-9 B TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 8000 kbits 8000 kbits 8000 kbits 8000 kbits
Package Type "48-TFSOP (0.724"", 18.40mm Width)" 48-TFSOP (0.724\", 18.40mm Width)
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