Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT28EW512ABA1LPN-0SIT TR

Description
IC FLASH 512MBIT PAR 56VFBGA
Datasheet
Description
IC FLASH 512MBIT PAR 56VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT28EW512ABA1LPN-0SIT TR
Integrated Circuits (ICs) - Memory - Memory MT28EW512ABA1LPN-0SIT TR
IC FLASH 512MBIT PAR 56VFBGA

IC FLASH 512MBIT PAR 56VFBGA

Supplier's Site
IC FLSH 512MBIT PARALLEL 56VFBGA

IC FLSH 512MBIT PARALLEL 56VFBGA

Supplier's Site Datasheet
FLASH - NOR Memory IC 512Mbit Parallel 95 ns 56-VFBGA (7x9)

FLASH - NOR Memory IC 512Mbit Parallel 95 ns 56-VFBGA (7x9)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT28EW512ABA1LPN-0SIT TR MT28EW512ABA1LPN-0SIT TR MT28EW512ABA1LPN-0SIT TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Cycle Time 60 ns
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage Surface Mount 3.6V; 2.7V ~ 3.6V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS27C010A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EPROM; UVEPROM
Access Time 41263 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Specs
Memory Category Flash; FLASH
Cycle Time 96 ns
Density 16000 kbits
View Details
SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 128000 kbits
View Details