Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT28EW256ABA1LPN-0SIT TR

Description
IC FLASH 256MBIT PAR 56VFBGA
Description
IC FLASH 256MBIT PAR 56VFBGA
Datasheet
Datasheet Summary
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The MT28EW256ABA1LPN-0SIT TR is a 256Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, and features asynchronous random and page read capabilities with a page access time of 20ns. The device supports a data bus configuration of x8/x16 and includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with acceleration. The memory organization consists of uniform blocks of 128KB or 64KW, with a typical block erase time of 0.2 seconds. It also offers program/erase suspend and resume capabilities, enabling operations on different blocks during suspend states. The device is compliant with JESD47 standards, providing a minimum of 100,000 erase cycles per block and a data retention period of 20 years. Available in multiple package options, including a 56-pin TSOP and a 56-ball VFBGA, the product is RoHS-compliant and operates within an ambient temperature range of -40¬8C to +85¬8C. This memory solution is suitable for applications requiring reliable data storage with robust performance characteristics.

Datasheet Summary
Powered by GS/AI

The MT28EW256ABA1LPN-0SIT TR is a 256Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, and features asynchronous random and page read capabilities with a page access time of 20ns. The device supports a data bus configuration of x8/x16 and includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with acceleration. The memory organization consists of uniform blocks of 128KB or 64KW, with a typical block erase time of 0.2 seconds. It also offers program/erase suspend and resume capabilities, enabling operations on different blocks during suspend states. The device is compliant with JESD47 standards, providing a minimum of 100,000 erase cycles per block and a data retention period of 20 years. Available in multiple package options, including a 56-pin TSOP and a 56-ball VFBGA, the product is RoHS-compliant and operates within an ambient temperature range of -40¬8C to +85¬8C. This memory solution is suitable for applications requiring reliable data storage with robust performance characteristics.

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT28EW256ABA1LPN-0SIT TR
Integrated Circuits (ICs) - Memory - Memory MT28EW256ABA1LPN-0SIT TR
IC FLASH 256MBIT PAR 56VFBGA

IC FLASH 256MBIT PAR 56VFBGA

Supplier's Site
FLASH - NOR Memory IC 256Mbit Parallel 75 ns 56-VFBGA (7x9)

FLASH - NOR Memory IC 256Mbit Parallel 75 ns 56-VFBGA (7x9)

Buy Now Datasheet
IC FLSH 256MBIT PARALLEL 56VFBGA

IC FLSH 256MBIT PARALLEL 56VFBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT28EW256ABA1LPN-0SIT TR MT28EW256ABA1LPN-0SIT TR MT28EW256ABA1LPN-0SIT TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH Flash; Flash
Cycle Time 60 ns
Density 256000 kbits 256000 kbits 256000 kbits
Supply Voltage Surface Mount 3.6V; 2.7V ~ 3.6V
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