Micron Technology, Inc. Memory MT28EW256ABA1LPN-0SIT TR

Description
FLASH - NOR Memory IC 256Mbit Parallel 75 ns 56-VFBGA (7x9)
Description
FLASH - NOR Memory IC 256Mbit Parallel 75 ns 56-VFBGA (7x9)
Datasheet
Datasheet Summary
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The MT28EW256ABA1LPN-0SIT TR is a 256Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, and features asynchronous random and page read capabilities with a page access time of 20ns. The device supports a data bus configuration of x8/x16 and includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with acceleration. The memory organization consists of uniform blocks of 128KB or 64KW, with a typical block erase time of 0.2 seconds. It also offers program/erase suspend and resume capabilities, enabling operations on different blocks during suspend states. The device is compliant with JESD47 standards, providing a minimum of 100,000 erase cycles per block and a data retention period of 20 years. Available in multiple package options, including a 56-pin TSOP and a 56-ball VFBGA, the product is RoHS-compliant and operates within an ambient temperature range of -40¬8C to +85¬8C. This memory solution is suitable for applications requiring reliable data storage with robust performance characteristics.

Datasheet Summary
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The MT28EW256ABA1LPN-0SIT TR is a 256Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, and features asynchronous random and page read capabilities with a page access time of 20ns. The device supports a data bus configuration of x8/x16 and includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with acceleration. The memory organization consists of uniform blocks of 128KB or 64KW, with a typical block erase time of 0.2 seconds. It also offers program/erase suspend and resume capabilities, enabling operations on different blocks during suspend states. The device is compliant with JESD47 standards, providing a minimum of 100,000 erase cycles per block and a data retention period of 20 years. Available in multiple package options, including a 56-pin TSOP and a 56-ball VFBGA, the product is RoHS-compliant and operates within an ambient temperature range of -40¬8C to +85¬8C. This memory solution is suitable for applications requiring reliable data storage with robust performance characteristics.

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Product
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FLASH - NOR Memory IC 256Mbit Parallel 75 ns 56-VFBGA (7x9)

FLASH - NOR Memory IC 256Mbit Parallel 75 ns 56-VFBGA (7x9)

Buy Now Datasheet
IC FLSH 256MBIT PARALLEL 56VFBGA

IC FLSH 256MBIT PARALLEL 56VFBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT28EW256ABA1LPN-0SIT TR
Integrated Circuits (ICs) - Memory - Memory MT28EW256ABA1LPN-0SIT TR
IC FLASH 256MBIT PAR 56VFBGA

IC FLASH 256MBIT PAR 56VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT28EW256ABA1LPN-0SIT TR MT28EW256ABA1LPN-0SIT TR MT28EW256ABA1LPN-0SIT TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 75 ns 75 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
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