Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT28EW256ABA1LPN-0SIT TR

Description
IC FLASH 256MBIT PAR 56VFBGA
Description
IC FLASH 256MBIT PAR 56VFBGA
Datasheet
Datasheet Summary
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The MT28EW256ABA1LPN-0SIT TR is a 256Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, and features asynchronous random and page read capabilities with a page access time of 20ns. The device supports a data bus configuration of x8/x16 and includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with acceleration. The memory organization consists of uniform blocks of 128KB or 64KW, with a typical block erase time of 0.2 seconds. It also offers program/erase suspend and resume capabilities, enabling operations on different blocks during suspend states. The device is compliant with JESD47 standards, providing a minimum of 100,000 erase cycles per block and a data retention period of 20 years. Available in multiple package options, including a 56-pin TSOP and a 56-ball VFBGA, the product is RoHS-compliant and operates within an ambient temperature range of -40¬8C to +85¬8C. This memory solution is suitable for applications requiring reliable data storage with robust performance characteristics.

Datasheet Summary
Powered by GS/AI

The MT28EW256ABA1LPN-0SIT TR is a 256Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, and features asynchronous random and page read capabilities with a page access time of 20ns. The device supports a data bus configuration of x8/x16 and includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with acceleration. The memory organization consists of uniform blocks of 128KB or 64KW, with a typical block erase time of 0.2 seconds. It also offers program/erase suspend and resume capabilities, enabling operations on different blocks during suspend states. The device is compliant with JESD47 standards, providing a minimum of 100,000 erase cycles per block and a data retention period of 20 years. Available in multiple package options, including a 56-pin TSOP and a 56-ball VFBGA, the product is RoHS-compliant and operates within an ambient temperature range of -40¬8C to +85¬8C. This memory solution is suitable for applications requiring reliable data storage with robust performance characteristics.

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT28EW256ABA1LPN-0SIT TR
Integrated Circuits (ICs) - Memory - Memory MT28EW256ABA1LPN-0SIT TR
IC FLASH 256MBIT PAR 56VFBGA

IC FLASH 256MBIT PAR 56VFBGA

Supplier's Site
IC FLSH 256MBIT PARALLEL 56VFBGA

IC FLSH 256MBIT PARALLEL 56VFBGA

Supplier's Site Datasheet
FLASH - NOR Memory IC 256Mbit Parallel 75 ns 56-VFBGA (7x9)

FLASH - NOR Memory IC 256Mbit Parallel 75 ns 56-VFBGA (7x9)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT28EW256ABA1LPN-0SIT TR MT28EW256ABA1LPN-0SIT TR MT28EW256ABA1LPN-0SIT TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Cycle Time 60 ns
Density 256000 kbits 256000 kbits 256000 kbits
Supply Voltage Surface Mount 3.6V; 2.7V ~ 3.6V
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