The MT28EW256ABA1LPN-0SIT TR is a 256Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, and features asynchronous random and page read capabilities with a page access time of 20ns. The device supports a data bus configuration of x8/x16 and includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with acceleration. The memory organization consists of uniform blocks of 128KB or 64KW, with a typical block erase time of 0.2 seconds. It also offers program/erase suspend and resume capabilities, enabling operations on different blocks during suspend states. The device is compliant with JESD47 standards, providing a minimum of 100,000 erase cycles per block and a data retention period of 20 years. Available in multiple package options, including a 56-pin TSOP and a 56-ball VFBGA, the product is RoHS-compliant and operates within an ambient temperature range of -40¬8C to +85¬8C. This memory solution is suitable for applications requiring reliable data storage with robust performance characteristics.
FLASH - NOR Memory IC 256Mbit Parallel 75 ns 56-VFBGA (7x9)
IC FLASH 256MBIT PAR 56VFBGA
IC FLSH 256MBIT PARALLEL 56VFBGA
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT28EW256ABA1LPN-0SIT TR | MT28EW256ABA1LPN-0SIT TR | MT28EW256ABA1LPN-0SIT TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Flash; FLASH | Flash; Non-Volatile | Flash; Flash |
| Access Time | 75 ns | 75 ns | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | ||
| Density | 256000 kbits | 256000 kbits | 256000 kbits |