Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT28EW128ABA1LPN-0SIT TR

Description
IC FLASH 128MBIT PAR 56VFBGA
Description
IC FLASH 128MBIT PAR 56VFBGA
Datasheet
Datasheet Summary
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The MT28EW128ABA1LPN-0SIT TR is a 128Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for core operations and 1.65V to V_CC for I/O buffers. The memory features single-level cell (SLC) technology and supports asynchronous random and page read operations, with a page access time of 20ns and random access times of 70ns at the specified voltage levels. This memory device includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with accelerated buffer programming. It supports a block erase time of 0.2 seconds for 128KB blocks and features program/erase suspend and resume capabilities, enabling read or program operations on different blocks during suspend states. The MT28EW128ABA1LPN-0SIT TR is packaged in a 56-pin TSOP, 14 x 20mm, and is RoHS-compliant and halogen-free. It is designed for a wide operating temperature range of -40¬8C to +85¬8C and offers a minimum of 100,000 erase cycles per block with a typical data retention of 20 years. This product is suitable for applications requiring reliable embedded memory solutions.

Datasheet Summary
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The MT28EW128ABA1LPN-0SIT TR is a 128Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for core operations and 1.65V to V_CC for I/O buffers. The memory features single-level cell (SLC) technology and supports asynchronous random and page read operations, with a page access time of 20ns and random access times of 70ns at the specified voltage levels. This memory device includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with accelerated buffer programming. It supports a block erase time of 0.2 seconds for 128KB blocks and features program/erase suspend and resume capabilities, enabling read or program operations on different blocks during suspend states. The MT28EW128ABA1LPN-0SIT TR is packaged in a 56-pin TSOP, 14 x 20mm, and is RoHS-compliant and halogen-free. It is designed for a wide operating temperature range of -40¬8C to +85¬8C and offers a minimum of 100,000 erase cycles per block with a typical data retention of 20 years. This product is suitable for applications requiring reliable embedded memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT28EW128ABA1LPN-0SIT TR
Integrated Circuits (ICs) - Memory - Memory MT28EW128ABA1LPN-0SIT TR
IC FLASH 128MBIT PAR 56VFBGA

IC FLASH 128MBIT PAR 56VFBGA

Supplier's Site
IC FLSH 128MBIT PARALLEL 56VFBGA

IC FLSH 128MBIT PARALLEL 56VFBGA

Supplier's Site Datasheet
FLASH - NOR Memory IC 128Mbit Parallel 95 ns 56-VFBGA (7x9)

FLASH - NOR Memory IC 128Mbit Parallel 95 ns 56-VFBGA (7x9)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT28EW128ABA1LPN-0SIT TR MT28EW128ABA1LPN-0SIT TR MT28EW128ABA1LPN-0SIT TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Cycle Time 60 ns
Density 128000 kbits 128000 kbits 128000 kbits
Supply Voltage Surface Mount 3.6V; 2.7V ~ 3.6V
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