The MT28EW128ABA1LPN-0SIT TR is a 128Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for core operations and 1.65V to V_CC for I/O buffers. The memory features single-level cell (SLC) technology and supports asynchronous random and page read operations, with a page access time of 20ns and random access times of 70ns at the specified voltage levels. This memory device includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with accelerated buffer programming. It supports a block erase time of 0.2 seconds for 128KB blocks and features program/erase suspend and resume capabilities, enabling read or program operations on different blocks during suspend states. The MT28EW128ABA1LPN-0SIT TR is packaged in a 56-pin TSOP, 14 x 20mm, and is RoHS-compliant and halogen-free. It is designed for a wide operating temperature range of -40¬8C to +85¬8C and offers a minimum of 100,000 erase cycles per block with a typical data retention of 20 years. This product is suitable for applications requiring reliable embedded memory solutions.
IC FLSH 128MBIT PARALLEL 56VFBGA
IC FLASH 128MBIT PAR 56VFBGA
FLASH - NOR Memory IC 128Mbit Parallel 95 ns 56-VFBGA (7x9)
| Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT28EW128ABA1LPN-0SIT TR | MT28EW128ABA1LPN-0SIT TR | MT28EW128ABA1LPN-0SIT TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Flash; Flash | Flash; Non-Volatile | Flash; FLASH |
| Access Time | 95 ns | 95 ns | |
| Density | 128000 kbits | 128000 kbits | 128000 kbits |
| Cycle Time | 60 ns |