Micron Technology, Inc. Memory MT28EW128ABA1LPN-0SIT TR

Description
FLASH - NOR Memory IC 128Mbit Parallel 95 ns 56-VFBGA (7x9)
Description
FLASH - NOR Memory IC 128Mbit Parallel 95 ns 56-VFBGA (7x9)
Datasheet
Datasheet Summary
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The MT28EW128ABA1LPN-0SIT TR is a 128Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for core operations and 1.65V to V_CC for I/O buffers. The memory features single-level cell (SLC) technology and supports asynchronous random and page read operations, with a page access time of 20ns and random access times of 70ns at the specified voltage levels. This memory device includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with accelerated buffer programming. It supports a block erase time of 0.2 seconds for 128KB blocks and features program/erase suspend and resume capabilities, enabling read or program operations on different blocks during suspend states. The MT28EW128ABA1LPN-0SIT TR is packaged in a 56-pin TSOP, 14 x 20mm, and is RoHS-compliant and halogen-free. It is designed for a wide operating temperature range of -40¬8C to +85¬8C and offers a minimum of 100,000 erase cycles per block with a typical data retention of 20 years. This product is suitable for applications requiring reliable embedded memory solutions.

Datasheet Summary
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The MT28EW128ABA1LPN-0SIT TR is a 128Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for core operations and 1.65V to V_CC for I/O buffers. The memory features single-level cell (SLC) technology and supports asynchronous random and page read operations, with a page access time of 20ns and random access times of 70ns at the specified voltage levels. This memory device includes a 512-word program buffer, allowing for typical programming speeds of 2.0 MB/s and 2.5 MB/s with accelerated buffer programming. It supports a block erase time of 0.2 seconds for 128KB blocks and features program/erase suspend and resume capabilities, enabling read or program operations on different blocks during suspend states. The MT28EW128ABA1LPN-0SIT TR is packaged in a 56-pin TSOP, 14 x 20mm, and is RoHS-compliant and halogen-free. It is designed for a wide operating temperature range of -40¬8C to +85¬8C and offers a minimum of 100,000 erase cycles per block with a typical data retention of 20 years. This product is suitable for applications requiring reliable embedded memory solutions.

Suppliers

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Product
Description
Supplier Links
FLASH - NOR Memory IC 128Mbit Parallel 95 ns 56-VFBGA (7x9)

FLASH - NOR Memory IC 128Mbit Parallel 95 ns 56-VFBGA (7x9)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT28EW128ABA1LPN-0SIT TR
Integrated Circuits (ICs) - Memory - Memory MT28EW128ABA1LPN-0SIT TR
IC FLASH 128MBIT PAR 56VFBGA

IC FLASH 128MBIT PAR 56VFBGA

Supplier's Site
IC FLSH 128MBIT PARALLEL 56VFBGA

IC FLSH 128MBIT PARALLEL 56VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT28EW128ABA1LPN-0SIT TR MT28EW128ABA1LPN-0SIT TR MT28EW128ABA1LPN-0SIT TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 95 ns 95 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits
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