The Micron 128Mbit Flash Memory (part number 80AH7598) is a parallel NOR flash memory device designed for embedded applications. It utilizes single-level cell (SLC) technology and operates within a supply voltage range of 2.7V to 3.6V for core functions, with I/O buffers operating at 1.65V to V_CC. The memory features a density of 128Mbit and supports both x8 and x16 configurations. Performance specifications include a page access time of 20ns and random access times of 70ns at 2.7V to 3.6V. The device supports a 512-word program buffer with typical programming speeds of 2.0 MB/s and 2.5 MB/s for accelerated operations. Block erase operations can be completed in approximately 0.2 seconds, and the device is capable of program/erase suspend and resume functions. The memory is organized into uniform blocks of 128KB and is compliant with JESD47 standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. It is available in multiple package options, including a 56-pin TSOP and a 64-ball LBGA, and is RoHS-compliant and halogen-free. The operating temperature range is specified from -40¬8C to +85¬8C, making it suitable for a variety of industrial applications.
FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Parallel 95ns 64-LBGA (11x13)
IC FLASH 128MBIT PARALLEL 64LBGA Product overview: MT28EW128ABA1LPC-0SI
Manufacturer: Micron Technology Inc.
Win Source Part Number: 803235-MT28EW128ABA1
Packaging: Tray
Mounting Style: SMD
Technology: FLASH - NOR
Memory Type: Non-Volatile
Memory Size: 128Mb (16M x 8, 8M x 16)
Access Time: 95ns
Supplier Device Package: 64-LBGA (11x13)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: FLASH
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Manufacturer Package: 64-LBGA
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,104
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.7V ~ 3.6V
IC FLASH 128MBIT PARALLEL 64LBGA
FLASH - NOR Memory IC 128Mbit Parallel 95 ns 64-LBGA (11x13)
IC FLASH 128MBIT PARALLEL 64LBGA
IC FLASH 128MBIT PARALLEL 64LBGA
FLASH MEMORY, 128MBIT, -40 TO 85DEG C; Flash Memory Type:SLC NOR; Memory Size:128Mbit; Flash Memory Configuration:8M x 16bit / 16M x 8bit; IC Interface Type:Parallel; Memory Case Style:LBGA; No. of Pins:64Pins; Clock Frequency:- RoHS Compliant: Yes
FLASH MEMORY, 128MBIT, -40 TO 85DEG C
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 557-1779-ND | 774-MT28EW128ABA1LPC-0SIT | 803235-MT28EW128ABA1LPC-0SIT | MT28EW128ABA1LPC-0SIT | MT28EW128ABA1LPC-0SIT | MT28EW128ABA1LPC-0SIT | MT28EW128ABA1LPC-0SIT | 80AH7598 | 82AJ0623 |
| Product Name | Memory | Memory IC and Storage Component | Memory - Flash - MT28EW128ABA1LPC-0SIT | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Flash Memory, 128Mbit, -40 To 85Deg C; Flash Memory Type Micron | Flash Memory, 128Mbit, -40 To 85Deg C Micron |
| Memory Category | Flash | Flash; Non-Volatile | Flash; Non-Volatile | Flash; FLASH - NOR | Flash; FLASH | Flash; Flash | Flash; Non-Volatile | Flash | Flash |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | ||
| Package Type | 64-LBGA | BGA; Tray | 64-LBGA | BGA; 64-LBGA | LBGA | ||||
| Supply Voltage | 2.7V ~ 3.6V | -3.3V; 3.6V; 2.7V ~ 3.6V | 2.7V ~ 3.6V | 2.7V ~ 3.6V | 3.6V; 2.7V ~ 3.6V | Surface Mount |
