Micron Technology, Inc. Memory IC and Storage Component MT28EW01GABA1LPC-0AAT

Description
IC FLASH 1GBIT PARALLEL 64LBGA Product overview: MT28EW01GABA1LPC-0AA T from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT28EW01GABA1LPC -0AAT can be used for catalog matching and distributor lookup.
  • Memory IC and Storage Component - 774-MT28EW01GABA1LPC-0AAT - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - MT28EW01GABA1LPC-0AAT-ND - DigiKey
    DigiKey
  • Integrated Circuits (ICs) - Memory - Memory - 1316508-MT28EW01GABA1LPC-0AAT - Win Source Electronics
    Win Source Electronics
  • Flash Memory, Aec-Q100, 1Gbit, 105Deg C; Flash Memory Type Micron - 80AH7592 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Memory - MT28EW01GABA1LPC-0AAT - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Integrated Circuits (ICs) - Memory - Memory - MT28EW01GABA1LPC-0AAT - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - MT28EW01GABA1LPC-0AAT - Lingto Electronic Limited
    Lingto Electronic Limited
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Description
IC FLASH 1GBIT PARALLEL 64LBGA Product overview: MT28EW01GABA1LPC-0AA T from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT28EW01GABA1LPC -0AAT can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The Micron 1Gbit Automotive Parallel NOR Flash memory (part number MT28EW01GABA1xJS-0AAT or MT28EW01GABA1xPC-0AAT) is designed for automotive applications and complies with AEC-Q100 standards. It features single-level cell (SLC) technology, operating at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations. The device supports asynchronous random and page read with a page size of 16 words (32 bytes) and access times of 20ns for page access and 105ns for random access. The memory organization consists of uniform blocks of 128KB or 64KW, with a data bus configuration of x8/x16. It includes a 512-word program buffer capable of programming at speeds of 2.0 MB/s and 2.5 MB/s for accelerated buffer programming. The device supports program/erase suspend and resume capabilities, allowing for operations on different blocks during suspend states. With a minimum of 100,000 erase cycles per block and a typical data retention of 20 years, this memory is suitable for long-term applications. The package options include a 56-pin TSOP and a 64-ball LBGA, both of which are RoHS-compliant and halogen-free. The operating temperature range is from -40°C to +105°C, making it suitable for harsh automotive environments.

Datasheet Summary
Powered by GS/AI

The Micron 1Gbit Automotive Parallel NOR Flash memory (part number MT28EW01GABA1xJS-0AAT or MT28EW01GABA1xPC-0AAT) is designed for automotive applications and complies with AEC-Q100 standards. It features single-level cell (SLC) technology, operating at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations. The device supports asynchronous random and page read with a page size of 16 words (32 bytes) and access times of 20ns for page access and 105ns for random access. The memory organization consists of uniform blocks of 128KB or 64KW, with a data bus configuration of x8/x16. It includes a 512-word program buffer capable of programming at speeds of 2.0 MB/s and 2.5 MB/s for accelerated buffer programming. The device supports program/erase suspend and resume capabilities, allowing for operations on different blocks during suspend states. With a minimum of 100,000 erase cycles per block and a typical data retention of 20 years, this memory is suitable for long-term applications. The package options include a 56-pin TSOP and a 64-ball LBGA, both of which are RoHS-compliant and halogen-free. The operating temperature range is from -40°C to +105°C, making it suitable for harsh automotive environments.

Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 774-MT28EW01GABA1LPC-0AAT - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT28EW01GABA1LPC-0AAT
Memory IC and Storage Component 774-MT28EW01GABA1LPC-0AAT
IC FLASH 1GBIT PARALLEL 64LBGA Product overview: MT28EW01GABA1LPC-0AA T from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT28EW01GABA1LPC -0AAT can be used for catalog matching and distributor lookup.

IC FLASH 1GBIT PARALLEL 64LBGA Product overview: MT28EW01GABA1LPC-0AAT from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT28EW01GABA1LPC-0AAT can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - MT28EW01GABA1LPC-0AAT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
MT28EW01GABA1LPC-0AAT-ND
Memory MT28EW01GABA1LPC-0AAT-ND
FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Parallel 105ns 64-LBGA (11x13)

FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Parallel 105ns 64-LBGA (11x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1316508-MT28EW01GABA1LPC-0AAT - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1316508-MT28EW01GABA1LPC-0AAT
Integrated Circuits (ICs) - Memory - Memory 1316508-MT28EW01GABA1LPC-0AAT
Manufacturer: Micron Technology Inc. Win Source Part Number: 1316508-MT28EW01GABA 1LPC-0AAT Category: Integrated Circuits (ICs)>Memory>Memory Packaging: Bulk Standard Package: 1,104 Mounting: Surface Mount Technology: FLASH - NOR Memory Type: Non-Volatile Memory Size: 1Gb (128M x 8, 64M x 16) Access Time: 105 ns Voltage - Supply: 2.7V ~ 3.6V Supplier Device Package: 64-LBGA (11x13) Temperature Range - Operating: -40°C ~ 105°C Case / Package: 64-LBGA Memory Format: FLASH Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel ECCN: 3A991B1A Fake Threat In the Open Market: 79 REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Base Product Number: MT28EW01 Product Status: Obsolete

Manufacturer: Micron Technology Inc.
Win Source Part Number: 1316508-MT28EW01GABA1LPC-0AAT
Category: Integrated Circuits (ICs)>Memory>Memory
Packaging: Bulk
Standard Package: 1,104
Mounting: Surface Mount
Technology: FLASH - NOR
Memory Type: Non-Volatile
Memory Size: 1Gb (128M x 8, 64M x 16)
Access Time: 105 ns
Voltage - Supply: 2.7V ~ 3.6V
Supplier Device Package: 64-LBGA (11x13)
Temperature Range - Operating: -40°C ~ 105°C
Case / Package: 64-LBGA
Memory Format: FLASH
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
ECCN: 3A991B1A
Fake Threat In the Open Market: 79
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Base Product Number: MT28EW01
Product Status: Obsolete

Buy Now Datasheet
Flash Memory, Aec-Q100, 1Gbit, 105Deg C; Flash Memory Type Micron - 80AH7592 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Flash Memory, Aec-Q100, 1Gbit, 105Deg C; Flash Memory Type Micron
80AH7592
Flash Memory, Aec-Q100, 1Gbit, 105Deg C; Flash Memory Type Micron 80AH7592
FLASH MEMORY, AEC-Q100, 1GBIT, 105DEG C; Flash Memory Type:SLC NOR; Memory Size:1Gbit; Flash Memory Configuration:64M x 16bit / 128M x 8bit; IC Interface Type:Parallel; Memory Case Style:LBGA; No. of Pins:64Pins; Clock Frequency:- RoHS Compliant: Yes

FLASH MEMORY, AEC-Q100, 1GBIT, 105DEG C; Flash Memory Type:SLC NOR; Memory Size:1Gbit; Flash Memory Configuration:64M x 16bit / 128M x 8bit; IC Interface Type:Parallel; Memory Case Style:LBGA; No. of Pins:64Pins; Clock Frequency:- RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - MT28EW01GABA1LPC-0AAT - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT28EW01GABA1LPC-0AAT
Memory MT28EW01GABA1LPC-0AAT
FLASH - NOR Memory IC 1Gbit Parallel 105 ns 64-LBGA (11x13)

FLASH - NOR Memory IC 1Gbit Parallel 105 ns 64-LBGA (11x13)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT28EW01GABA1LPC-0AAT - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT28EW01GABA1LPC-0AAT
Integrated Circuits (ICs) - Memory - Memory MT28EW01GABA1LPC-0AAT
IC FLASH 1GBIT PARALLEL 64LBGA

IC FLASH 1GBIT PARALLEL 64LBGA

Supplier's Site
Memory - MT28EW01GABA1LPC-0AAT - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT28EW01GABA1LPC-0AAT
Memory MT28EW01GABA1LPC-0AAT
IC FLASH 1GBIT PARALLEL 64LBGA

IC FLASH 1GBIT PARALLEL 64LBGA

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Newark, An Avnet Company Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT28EW01GABA1LPC-0AAT MT28EW01GABA1LPC-0AAT-ND 1316508-MT28EW01GABA1LPC-0AAT 80AH7592 MT28EW01GABA1LPC-0AAT MT28EW01GABA1LPC-0AAT MT28EW01GABA1LPC-0AAT
Product Name Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Flash Memory, Aec-Q100, 1Gbit, 105Deg C; Flash Memory Type Micron Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash Flash; Non-Volatile Flash Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 105 ns 105 ns 105 ns 105 ns
Cycle Time 60 ns 60 ns 60 ns
Endurance 100000 Write/Erase Cycles
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
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