Micron Technology, Inc. Memory MT28EW01GABA1LPC-0AAT

The Micron 1Gbit Automotive Parallel NOR Flash memory (part number MT28EW01GABA1xJS-0AAT or MT28EW01GABA1xPC-0AAT) is designed for automotive applications and complies with AEC-Q100 standards. It features single-level cell (SLC) technology, operating at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations. The device supports asynchronous random and page read with a page size of 16 words (32 bytes) and access times of 20ns for page access and 105ns for random access. The memory organization consists of uniform blocks of 128KB or 64KW, with a data bus configuration of x8/x16. It includes a 512-word program buffer capable of programming at speeds of 2.0 MB/s and 2.5 MB/s for accelerated buffer programming. The device supports program/erase suspend and resume capabilities, allowing for operations on different blocks during suspend states. With a minimum of 100,000 erase cycles per block and a typical data retention of 20 years, this memory is suitable for long-term applications. The package options include a 56-pin TSOP and a 64-ball LBGA, both of which are RoHS-compliant and halogen-free. The operating temperature range is from -40¬8C to +105¬8C, making it suitable for harsh automotive environments.