Micron Technology, Inc. Memory IC and Storage Component MT25QL128ABA1EW7-0SIT TR

Description

IC FLASH 128MBIT SPI 8WPDFN Product overview: MT25QL128ABA1EW7-0SI T TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT25QL128ABA1EW7 -0SIT TR can be used for catalog matching and distributor lookup.

ERSAELECTRONICS PTE. LTD.
DigiKey
DigiKey
DigiKey
Win Source Electronics
Quarktwin Technology Ltd.
ODG (Origin Data Global)
Shenzhen Shengyu Electronics Technology Limited
Lingto Electronic Limited

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Datasheet

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The MT25QL128ABA1EW7-0SIT TR is a 128Mbit Serial NOR Flash memory device from Quarktwin Technology Ltd. It operates at a voltage range of 2.7V to 3.6V and features a SPI-compatible serial bus interface. The device supports both single and double transfer rates, with a maximum clock frequency of 133 MHz in single transfer mode and 90 MHz in dual transfer mode. It offers dual and quad I/O commands, enabling data throughput of up to 90 MB/s. This memory device includes various erase capabilities, such as bulk erase, sector erase (64KB), and subsector erase (4KB and 32KB). It also supports execute-in-place (XIP) functionality and has programmable and erasable memory with suspend operations. Security features include volatile and nonvolatile locking, password protection, and hardware write protection, ensuring data integrity. The MT25QL128ABA1EW7-0SIT TR is compliant with JESD47H standards, providing a minimum of 100,000 erase cycles per sector and a typical data retention of 20 years. It is available in multiple package options, including an 8-pin W-PDFN package measuring 6mm x 5mm. This device is suitable for applications requiring reliable and high-speed memory solutions.

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ERSAELECTRONICS PTE. LTD.

Singapore, Singapore

Memory IC and Storage Component
774-MT25QL128ABA1EW7-0SIT TR

Memory IC and Storage Component 774-MT25QL128ABA1EW7-0SIT TR

Supplier's Site

DigiKey

Thief River Falls, MN, United States

Memory
557-1791-1-ND

Memory 557-1791-1-ND

FLASH - NOR Memory IC 128Mb (16M x 8) SPI 133MHz 8-WPDFN (6x5)(MLP8)

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Datasheet

DigiKey

Thief River Falls, MN, United States

Memory
557-1791-2-ND

Memory 557-1791-2-ND

FLASH - NOR Memory IC 128Mb (16M x 8) SPI 133MHz 8-WPDFN (6x5)(MLP8)

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Datasheet

DigiKey

Thief River Falls, MN, United States

Memory
557-1791-6-ND

Memory 557-1791-6-ND

FLASH - NOR Memory IC 128Mb (16M x 8) SPI 133MHz 8-WPDFN (6x5)(MLP8)

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Datasheet

Win Source Electronics

Laguna Hills, CA, United States

Integrated Circuits (ICs) - Memory
1254221-MT25QL128ABA1EW7-0SIT TR

Integrated Circuits (ICs) - Memory 1254221-MT25QL128ABA1EW7-0SIT TR

Win Source Part Number: 1254221-MT25QL128ABA 1EW7-0SIT TR Category: Integrated Circuits (ICs)>Memory Package: Tape & Reel Standard Package: 4,000 Mounting: SMD (SMT) Technology: FLASH - NOR Memory Type: Non-Volatile Memory Size: 128Mb (16M x 8) Voltage - Supply: 2.7V ~ 3.6V Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPDFN (6x5)(MLP8) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Memory Interface: SPI ECCN: 3A991B1A Fake Threat In the Open Market: 64 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Micron Technology Inc. Other Names: 557-1791-6,557-1791- 2,557-1791-1 Base Product Number: MT25QL128

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Datasheet

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
MT25QL128ABA1EW7-0SIT TR

Memory MT25QL128ABA1EW7-0SIT TR

FLASH - NOR Memory IC 128Mbit SPI 133 MHz 8-WPDFN (6x5)(MLP8)

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Datasheet

ODG (Origin Data Global)

Shenzhen, China

Memory
MT25QL128ABA1EW7-0SIT TR

Memory MT25QL128ABA1EW7-0SIT TR

IC FLASH 128MBIT SPI 8WPDFN

Supplier's Site

Datasheet

Shenzhen Shengyu Electronics Technology Limited

Futian, China

Integrated Circuits (ICs) - Memory - Memory
MT25QL128ABA1EW7-0SIT TR

Integrated Circuits (ICs) - Memory - Memory MT25QL128ABA1EW7-0SIT TR

IC FLASH 128MBIT SPI 8WPDFN

Supplier's Site

Lingto Electronic Limited

Shenzhen, China

Memory
MT25QL128ABA1EW7-0SIT TR

Memory MT25QL128ABA1EW7-0SIT TR

IC FLASH 128MBIT SPI 8WPDFN

Supplier's Site

Datasheet

Technical Specifications

	ERSAELECTRONICS PTE. LTD.	DigiKey	Win Source Electronics	Quarktwin Technology Ltd.	ODG (Origin Data Global)	Shenzhen Shengyu Electronics Technology Limited	Lingto Electronic Limited
Product Category	Memory Chips	Memory Chips	Memory Chips	Memory Chips	Memory Chips	Memory Chips	Memory Chips
Product Number	774-MT25QL128ABA1EW7-0SIT TR	557-1791-1-ND	1254221-MT25QL128ABA1EW7-0SIT TR	MT25QL128ABA1EW7-0SIT TR	MT25QL128ABA1EW7-0SIT TR	MT25QL128ABA1EW7-0SIT TR	MT25QL128ABA1EW7-0SIT TR
Product Name	Memory IC and Storage Component	Memory	Integrated Circuits (ICs) - Memory	Memory	Memory	Integrated Circuits (ICs) - Memory - Memory	Memory
Memory Category	Flash; Non-Volatile	Flash	Flash; Non-Volatile	Flash; FLASH	Flash; FLASH - NOR	Flash; Non-Volatile	Flash; Flash
Access Time	6 ns
Cycle Time	8.00E6 to 2.80E6 ns		8.00E6 ns
Endurance	100000 Write/Erase Cycles
Operating Temperature	-40 to 85 C (-40 to 185 F)	-40 to 85 C (-40 to 185 F)	-40 to 85 C (-40 to 185 F)	-40 to 85 C (-40 to 185 F)	-40 to 85 C (-40 to 185 F)