Micron Technology, Inc. Memory M58WR064KU70ZA6E

Description
IC FLASH 64MBIT PARALLEL 88VFBGA
Datasheet
Description
IC FLASH 64MBIT PARALLEL 88VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 64MBIT PARALLEL 88VFBGA

IC FLASH 64MBIT PARALLEL 88VFBGA

Supplier's Site Datasheet
Memory - M58WR064KU70ZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 88-VFBGA (8x10)

FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 88-VFBGA (8x10)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M58WR064KU70ZA6E
Integrated Circuits (ICs) - Memory - Memory M58WR064KU70ZA6E
IC FLASH 64MBIT PARALLEL 88VFBGA

IC FLASH 64MBIT PARALLEL 88VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M58WR064KU70ZA6E M58WR064KU70ZA6E M58WR064KU70ZA6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 70 ns 70 ns
Density 64000 kbits 64000 kbits 64000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - S25FL128SDPMFIG00 - Quarktwin Technology Ltd.
Rochester Electronics
Specs
Memory Category Flash; FLASH
Access Time 6.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - 99326-E0496-B - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882540 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - AS5C4009 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details