Micron Technology, Inc. Memory M58WR064KT7AZB6E

Description
FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)
Datasheet
Description
FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M58WR064KT7AZB6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)

FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M58WR064KT7AZB6E
Integrated Circuits (ICs) - Memory - Memory M58WR064KT7AZB6E
IC FLASH 64MBIT PARALLEL 56VFBGA

IC FLASH 64MBIT PARALLEL 56VFBGA

Supplier's Site
IC FLASH 64MBIT PARALLEL 56VFBGA

IC FLASH 64MBIT PARALLEL 56VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M58WR064KT7AZB6E M58WR064KT7AZB6E M58WR064KT7AZB6E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits
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