Micron Technology, Inc. Memory M58WR064KT7AZB6E

Description
IC FLASH 64MBIT PARALLEL 56VFBGA
Datasheet
Description
IC FLASH 64MBIT PARALLEL 56VFBGA
Datasheet

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Product
Description
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IC FLASH 64MBIT PARALLEL 56VFBGA

IC FLASH 64MBIT PARALLEL 56VFBGA

Supplier's Site Datasheet
Memory - M58WR064KT7AZB6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)

FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M58WR064KT7AZB6E
Integrated Circuits (ICs) - Memory - Memory M58WR064KT7AZB6E
IC FLASH 64MBIT PARALLEL 56VFBGA

IC FLASH 64MBIT PARALLEL 56VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M58WR064KT7AZB6E M58WR064KT7AZB6E M58WR064KT7AZB6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 70 ns 70 ns
Density 64000 kbits 64000 kbits 64000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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