Micron Technology, Inc. Memory M58WR064KB7AZB6F TR

Description
IC FLASH 64MBIT PARALLEL 56VFBGA
Datasheet
Description
IC FLASH 64MBIT PARALLEL 56VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 64MBIT PARALLEL 56VFBGA

IC FLASH 64MBIT PARALLEL 56VFBGA

Supplier's Site Datasheet
Memory - M58WR064KB7AZB6F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)

FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M58WR064KB7AZB6F TR
Integrated Circuits (ICs) - Memory - Memory M58WR064KB7AZB6F TR
IC FLASH 64MBIT PARALLEL 56VFBGA

IC FLASH 64MBIT PARALLEL 56VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M58WR064KB7AZB6F TR M58WR064KB7AZB6F TR M58WR064KB7AZB6F TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 70 ns 70 ns
Density 64000 kbits 64000 kbits 64000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882521 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Memory - IS29GL128S-10TFV02-TR - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers