Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory M58WR064EB70ZB6

Description
IC FLASH 64MBIT PARALLEL 56VFBGA
Datasheet
Description
IC FLASH 64MBIT PARALLEL 56VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - M58WR064EB70ZB6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M58WR064EB70ZB6
Integrated Circuits (ICs) - Memory - Memory M58WR064EB70ZB6
IC FLASH 64MBIT PARALLEL 56VFBGA

IC FLASH 64MBIT PARALLEL 56VFBGA

Supplier's Site
IC FLASH 64MBIT PARALLEL 56VFBGA

IC FLASH 64MBIT PARALLEL 56VFBGA

Supplier's Site Datasheet
Memory - M58WR064EB70ZB6 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)

FLASH - NOR Memory IC 64Mbit Parallel 66 MHz 70 ns 56-VFBGA (7.7x9)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number M58WR064EB70ZB6 M58WR064EB70ZB6 M58WR064EB70ZB6
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Cycle Time 70 ns
Density 64000 kbits 64000 kbits 64000 kbits
Supply Voltage Surface Mount 1.65V ~ 2.2V
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