Micron Technology, Inc. Memory M58LT128KSB7ZA6E

The M58LT128KSB7ZA6E is a 128 Mbit NOR flash memory device from Quarktwin Technology Ltd., organized as 8 Mb vó 16 with multiple bank and multilevel interface capabilities. It operates with a supply voltage of 1.7 V to 2.0 V for programming, erasing, and reading, while the I/O buffers require a voltage of 2.7 V to 3.6 V. The device supports synchronous burst read mode at 52 MHz and asynchronous page read mode, with random access times of 85 ns and 70 ns. This memory device features a typical word programming time of 2.5 ¬µs using the Buffer Enhanced Factory Program command and allows dual operations, enabling programming or erasing in one bank while reading from others without delay. It includes block protection features, with all blocks protected at power-up and the ability to protect any combination of blocks with zero latency. The M58LT128KSB7ZA6E also offers software security features, including a 64-bit unique device number and 2112-bit user programmable OTP cells, making it suitable for applications requiring secure data storage. The device is packaged in a RoHS compliant TBGA64 package measuring 10 vó 13 mm.