Micron Technology, Inc. Memory M58LR128KB85ZB6E

The M58LR128KB85ZB6E is a 128 Mbit (16 Mbyte) NOR flash memory device from Quarktwin Technology Ltd., designed for high-performance applications. It operates with a supply voltage range of 1.7 V to 2.0 V for both memory operations and I/O buffers, and features a fast program time of 2.5 Oºs per word using the Buffer Enhanced Factory Program command. This memory device supports synchronous burst read modes at frequencies of 54 MHz and 66 MHz, as well as asynchronous page read modes with random access times of 70 ns to 85 ns. It includes a multiple bank memory architecture, allowing for dual operations where programming or erasing can occur in one bank while reading from another, facilitating efficient data handling. The M58LR128KB85ZB6E is packaged in a 56-ball VFBGA (7.7 x 9 mm) format, compliant with ECOPACK standards, making it suitable for compact designs. It also features block locking capabilities for enhanced security, with all blocks locked at power-up and the option to lock any combination of blocks with zero latency. The device is rated for 100,000 program/erase cycles per block, ensuring durability for extensive use in various applications.