Micron Technology, Inc. Memory M29W800FB70ZA3SF TR

Description
FLASH - NOR Memory IC 8Mbit Parallel 70 ns 48-TFBGA (6x8)
Datasheet
Description
FLASH - NOR Memory IC 8Mbit Parallel 70 ns 48-TFBGA (6x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29W800FB70ZA3SF TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 8Mbit Parallel 70 ns 48-TFBGA (6x8)

FLASH - NOR Memory IC 8Mbit Parallel 70 ns 48-TFBGA (6x8)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W800FB70ZA3SF TR
Integrated Circuits (ICs) - Memory - Memory M29W800FB70ZA3SF TR
IC FLASH 8MBIT PARALLEL 48TFBGA

IC FLASH 8MBIT PARALLEL 48TFBGA

Supplier's Site
IC FLASH 8MBIT PARALLEL 48TFBGA

IC FLASH 8MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W800FB70ZA3SF TR M29W800FB70ZA3SF TR M29W800FB70ZA3SF TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 70 ns 70 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
Density 8000 kbits 8000 kbits 8000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C02/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 2 kbits
View Details
Memory - A2C0006273800 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 1882632P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 2048000 kbits
View Details
Memory - AS8S128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details