The M29W800FB70N3F TR is an 8-Mbit (1 Mbit x 8 / 512 Kbit x 16) NOR Flash memory device from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7 V to 3.6 V and features a read access time of 70 ns. The device includes 19 memory blocks, which consist of 1 boot block, 3 parameter blocks, and 15 main blocks, allowing for flexible memory management. Programming time is typically 10 µs per byte/word, and the memory supports 100,000 program/erase cycles per block. It also features an erase suspend and resume mode, enabling read and program operations on another block during an erase operation. The device is designed for low power consumption with standby and automatic standby modes. The M29W800FB70N3F TR is available in RoHS-compliant packages, including a 48-pin TSOP and a 48-ball TFBGA, making it suitable for various applications, including automotive systems.
FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Parallel 70ns 48-TSOP
FLASH - NOR Memory IC 8Mbit Parallel 70 ns 48-TSOP I
IC FLASH 8MBIT PARALLEL 48TSOP I
IC FLASH 8MBIT PARALLEL 48TSOP
| DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | M29W800FB70N3FTR-ND | M29W800FB70N3F TR | M29W800FB70N3F TR | M29W800FB70N3F TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Flash | Flash; FLASH | Flash; Non-Volatile | Flash; Flash |
| Operating Temperature | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | ||
| Density | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits |
| Package Type | "48-TFSOP (0.724"", 18.40mm Width)" | 48-TFSOP (0.724\", 18.40mm Width) |
