Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory M29W512GH70N3E

Description
IC FLASH 512MBIT PARALLEL 56TSOP
Datasheet
Description
IC FLASH 512MBIT PARALLEL 56TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - M29W512GH70N3E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W512GH70N3E
Integrated Circuits (ICs) - Memory - Memory M29W512GH70N3E
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Memory - M29W512GH70N3E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 70 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 70 ns 56-TSOP

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W512GH70N3E M29W512GH70N3E M29W512GH70N3E
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage 56-TFSOP (0.724, 18.40mm Width) 3.6V; 2.7V ~ 3.6V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71256TTSA15Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 256 kbits
View Details
Memory - 2437530 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory IC and Storage Component - 736-DP8421AVX-25 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 C (32 F)
Package Type LCC
View Details
4 suppliers
Memory - AS5C4008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details