Micron Technology, Inc. Memory M29W512GH70N3E

Description
FLASH - NOR Memory IC 512Mbit Parallel 70 ns 56-TSOP
Datasheet
Description
FLASH - NOR Memory IC 512Mbit Parallel 70 ns 56-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29W512GH70N3E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 70 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 70 ns 56-TSOP

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IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - M29W512GH70N3E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W512GH70N3E
Integrated Circuits (ICs) - Memory - Memory M29W512GH70N3E
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W512GH70N3E M29W512GH70N3E M29W512GH70N3E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 70 ns 70 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
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