Micron Technology, Inc. Memory M29W400DB55ZE6E

Description
FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Parallel 55ns 48-TFBGA (6x9)
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Parallel 55ns 48-TFBGA (6x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29W400DB55ZE6E-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Parallel 55ns 48-TFBGA (6x9)

FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Parallel 55ns 48-TFBGA (6x9)

Buy Now Datasheet
IC FLASH 4MBIT PARALLEL 48TFBGA

IC FLASH 4MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
Memory - M29W400DB55ZE6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x9)

FLASH - NOR Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - M29W400DB55ZE6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W400DB55ZE6E
Integrated Circuits (ICs) - Memory - Memory M29W400DB55ZE6E
IC FLASH 4MBIT PARALLEL 48TFBGA

IC FLASH 4MBIT PARALLEL 48TFBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number M29W400DB55ZE6E-ND M29W400DB55ZE6E M29W400DB55ZE6E M29W400DB55ZE6E
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash; Flash Flash; FLASH Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type 48-TFBGA BGA; 48-TFBGA
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