Micron Technology, Inc. Memory M29W400DB55N6E

Description
IC FLASH 4MBIT PARALLEL 48TSOP
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Description
IC FLASH 4MBIT PARALLEL 48TSOP
Request a Quote Datasheet

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Product
Description
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IC FLASH 4MBIT PARALLEL 48TSOP

IC FLASH 4MBIT PARALLEL 48TSOP

Supplier's Site Datasheet
Memory - Flash - M29W400DB55N6E - 090510-M29W400DB55N6E - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - M29W400DB55N6E
090510-M29W400DB55N6E
Memory - Flash - M29W400DB55N6E 090510-M29W400DB55N6E
Manufacturer: Micron Technology Inc. Win Source Part Number: 090510-M29W400DB55N6 E Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Access Time: 55ns Family Name: M29W400DB Categories: Integrated Circuits Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Alternative Parts (Cross-Reference): S29AL004D55TANR21; S29AL004D55TANR23 ; S29AL004D55TAIR22 ; S29AL004D55TFNR21 ; Introduction Date: March 23, 1998 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Win Source Part Number: 090510-M29W400DB55N6E
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Access Time: 55ns
Family Name: M29W400DB
Categories: Integrated Circuits
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): S29AL004D55TANR21; S29AL004D55TANR23 ; S29AL004D55TAIR22 ; S29AL004D55TFNR21 ;
Introduction Date: March 23, 1998
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - M29W400DB55N6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 4Mbit Parallel 55 ns 48-TSOP I

FLASH - NOR Memory IC 4Mbit Parallel 55 ns 48-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - Memory - M29W400DB55N6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W400DB55N6E
Integrated Circuits (ICs) - Memory - Memory M29W400DB55N6E
IC FLASH 4MBIT PARALLEL 48TSOP I

IC FLASH 4MBIT PARALLEL 48TSOP I

Supplier's Site
IC FLASH 4MBIT PARALLEL 48TSOP

IC FLASH 4MBIT PARALLEL 48TSOP

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number M29W400DB55N6E 090510-M29W400DB55N6E M29W400DB55N6E M29W400DB55N6E M29W400DB55N6E
Product Name Memory Memory - Flash - M29W400DB55N6E Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH - NOR Flash; FLASH Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 55 ns 55 ns 55 ns 55 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
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