Micron Technology, Inc. Memory M29W256GSL70ZS6E

Description
FLASH - NOR Memory IC 256Mbit Parallel 70 ns 64-FBGA (11x13)
Datasheet
Description
FLASH - NOR Memory IC 256Mbit Parallel 70 ns 64-FBGA (11x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29W256GSL70ZS6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 256Mbit Parallel 70 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 256Mbit Parallel 70 ns 64-FBGA (11x13)

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Integrated Circuits (ICs) - Memory - Memory - M29W256GSL70ZS6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W256GSL70ZS6E
Integrated Circuits (ICs) - Memory - Memory M29W256GSL70ZS6E
IC FLASH 256MBIT PARALLEL 64FBGA

IC FLASH 256MBIT PARALLEL 64FBGA

Supplier's Site
IC FLASH 256MBIT PARALLEL 64FBGA

IC FLASH 256MBIT PARALLEL 64FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W256GSL70ZS6E M29W256GSL70ZS6E M29W256GSL70ZS6E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
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